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FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
LPA6836V
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OCR Text |
...As) Pseudomorphic High Electron mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 360 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source and gate resistances. The epit... |
Description |
MEDIUM POWER PHEMT WITH SOURCE VIAS
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File Size |
69.65K /
3 Page |
View
it Online |
Download Datasheet |
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http:// FILTRONIC[Filtronic Compound Semiconductors]
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Part No. |
EB-FPM2750QFN-BAL FPM2750QFN EB-FPM2750QFN-SE
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OCR Text |
... of pseudomorphic High Electron mobility Transistors (pHEMT) specifically optimised for balanced configuration systems. The Filtronic 0.25m process ensures class-leading noise performance. The use of a small footprint plastic package allows... |
Description |
LOW NOISE HIGH LINEARITY BALANCED AMPLIFIER MODULE
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File Size |
414.92K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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