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mos-fets Datasheet PDF File

For mos-fets Found Datasheets File :: 1346 Search Time::3.344ms
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				Supertex Inc SUTEX[Supertex, Inc]
Part No.	VP3203 VP3203N3 VP3203N8 VP3203ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of swi...
Description	P-Channel Enhancement-Mode Vertical DMOS FETs
File Size	452.25K / 4 Page	View it Online	Download Datasheet

				Supertex Inc Supertex Inc SUTEX[Supertex, Inc]
Part No.	TN0104 TN0104N3 TN0104N8 TN0104ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	34.16K / 4 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc] Supertex Inc
Part No.	TN0106 TN0106N3 TN0110 TN0110N3 TN0110ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	27.67K / 4 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc]
Part No.	TN0604 TN0604N3 TN0604WG
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	41.74K / 4 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc] Supertex Inc
Part No.	TN0606 TN0606N3 TN0606N5 TN0610 TN0610N3
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	30.69K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc] Supertex Inc
Part No.	TN0620 TN0620N3 TN0620N5
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	27.80K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc] Supertex Inc SUTEX[Supertex Inc]
Part No.	TN2106 TN2106K1 TN2106N3 TN2106ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	26.91K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	TN2124 TN2124K1 TN2124N8
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of swit...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	31.93K / 4 Page	View it Online	Download Datasheet

				Supertex Inc SUTEX[Supertex, Inc]
Part No.	TN2130 TN2130K1 TN2130ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. Supertex's vertical DMOS FETs are ideally suited to a wide range of sw...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	448.29K / 4 Page	View it Online	Download Datasheet

				SUTEX[Supertex, Inc]
Part No.	TN2425 TN2425N8 TN2425ND
OCR Text	...erature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally induced secondary breakdown. Supertex vertical DMOS FETs are ideally suited to a wide range of swit...
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
File Size	440.85K / 4 Page	View it Online	Download Datasheet

For mos-fets Found Datasheets File :: 1346 Search Time::3.344ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |