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  puls Datasheet PDF File

For puls Found Datasheets File :: 3095    Search Time::1.297ms    
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    BUZ71S2 C67078-S1316-A9

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BUZ71S2 C67078-S1316-A9
OCR Text ...rge VGS = (QGate) parameter: ID puls = 22 A 16 EAS 5.0 4.5 4.0 3.5 VGS 12 0,2 VDS max 0,8 VDS max 10 8 3.0 2.5 2.0 1.5 1.0 0.5 0.0 20 40 60 80 100 120 C 160 0 0 4 8 12 16 20 24 nC 30 4 6 2 Tj Q Gate Drain-sour...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
From old datasheet system

File Size 129.74K  /  9 Page

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    SMBD7000 MMBD7000 SMBD7000/MMBD7000

INFINEON[Infineon Technologies AG]
Part No. SMBD7000 MMBD7000 SMBD7000/MMBD7000
OCR Text ...BD7000/MMBD7000... Permissible puls Load RthJS = (tp) Permissible pulse Load IFmax / I FDC = (t p) 10 3 10 2 I Fmax/IFDC 10 2 - 10 1 10 0 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0...
Description General Purpose Diodes - Silicon Switching Diode Array for high-speed switching

File Size 442.12K  /  4 Page

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    SMBD914 MMBD914 SMBD914/MMBD914

INFINEON[Infineon Technologies AG]
Part No. SMBD914 MMBD914 SMBD914/MMBD914
OCR Text ...SMBD914/MMBD914... Permissible puls Load RthJS = (tp) Permissible pulse Load IFmax / I FDC = (t p) 10 3 K/W 10 2 10 2 I Fmax/IFDC 10 1 10 0 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 ...
Description General Purpose Diodes - Silicon Switching Diode for high-speed switching

File Size 450.63K  /  4 Page

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    SPD14N05 SPU14N05 Q67040-S4115-A2 Q67040-S4123-A2

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. SPD14N05 SPU14N05 Q67040-S4115-A2 Q67040-S4123-A2
OCR Text ...rge VGS = (QGate) parameter: ID puls = 14 A 16 V mJ EAS VGS 12 40 10 0,2 VDS max 0,8 VDS max 30 8 6 20 4 10 2 0 40 60 80 100 120 140 C Tj 0 20 180 0 1 2 3 4 5 6 7 nC 9 Q Gate...
Description SIPMOS Power Transistor SIPMOS功率晶体
SIPMOS ? Power Transistor
From old datasheet system

File Size 139.85K  /  8 Page

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    SPW15N60C3

INFINEON[Infineon Technologies AG]
Part No. SPW15N60C3
OCR Text ... Value 15 9.4 Unit A I D puls EAS 45 460 0.8 15 6 20 30 156 -55... +150 W C 2003-09-17 A V/ns V mJ Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C Operating and storage temperature Page 1...
Description for lowest Conduction Losses & fastest Switching
Cool MOS™ Power Transistor
Cool MOS Power Transistor

File Size 237.19K  /  11 Page

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    300UF160AYPD 70UF160AYPD 300U30A 300U 300U80A 300UFR160AYPD 700U 70UFR160AYPD 72UR160APD 72UR120APD 300UR160APD 302UR120

IRF[International Rectifier]
International Rectifier, Corp.
MtronPTI
Part No. 300UF160AYPD 70UF160AYPD 300U30A 300U 300U80A 300UFR160AYPD 700U 70UFR160AYPD 72UR160APD 72UR120APD 300UR160APD 302UR120APD 302UR160APD 300UR120APD 72U160AYPD 72U160YPD 70UF160PD 70UFR120AYPD 70UF120AYPD 70R..DSERIES 302U160PD 300UR120PD 300UR120YPD 70U120APD 300UFR120AYPD 300UFR120PD 300UFR120APD 300U120APD 300U160APD 300UF120APD 300UF160APD 300UFR160APD 302U120APD 302U160APD 302UF120APD 302UF160APD 302UFR120APD 302UFR160APD 70U160APD 70UF120APD 70UF160APD 70UFR120APD 70UFR160APD 70UR120APD 70UR160APD 300UF160PD 300UF160YPD 302UF160AYPD 302UF160PD 302UF160YPD 300U120YPD 300UF120YPD 300UFR120YPD 302U120YPD 302UF120YPD 302UFR120YPD 302UR120YPD 70U120YPD 70UF120YPD 70UFR120YPD 70UR120YPD 72UF120YPD 72U120YPD 72UFR120YPD 72UR120YPD 302UFR120AYPD 300UFR160PD 302UFR120PD 300UFR160YPD 302UFR160AYPD 302UFR160PD 302UFR160YPD 70UFR120PD 70UFR160PD 70UFR160YPD 72UFR120APD 72UFR120PD 72UFR120AYPD 72UFR160APD 300UR120AYPD 302U160AYPD 302UR160AYPD 70U160AYPD 70UR160AYPD 72U120AYPD 72UF160AYPD 72UFR160AYPD 72UF120AYPD 70UR120AYPD 70U120AYPD 302UR120AYPD 302UF120AYPD 302U120AYPD 300UR160AYPD 300UF120AYPD 300U120AYPD 300U120PD 72U160APD 72UF160YPD 72UF120APD 72UF120PD 72U160PD 72U120APD 72UFR160PD
OCR Text ...0 70/ 300U(R)..D S eries 0.1 puls T e rain Duration (s) 1 1500 0.01 Number Of E qua l Amplitude Half Cyc le Current pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 10000 Ins tantaneous Forward Current (A) Fig. 6 - Ma...
Description STANDARD RECOVERY DIODES Stud Version 标准恢复二极管螺柱版
320 x 240 pixel format, Uses bare die driver IC 标准恢复二极管螺柱版
320 x 240 pixel format, Chip-On-Glass Technology 标准恢复二极管螺柱版
STANDARD RECOVERY DIODES 250A 标准恢复二极50A
240 x 64 pixel format, CFL, LED, or EL Backlight available 标准恢复二极管螺柱版

File Size 169.60K  /  7 Page

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    BUP300 Q67078-A4203-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP300 Q67078-A4203-A2
OCR Text ...rge VGE = (QGate) parameter: IC puls = 1 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 14 400 V 12 10 8 6 4 2 0 0 800 V 4 8 12 16 20 24 32 Q Gate Semiconductor Gr...
Description IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system

File Size 338.36K  /  7 Page

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    BUP302 Q67078-A4205-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP302 Q67078-A4205-A2
OCR Text ...rge VGE = (QGate) parameter: IC puls = 6 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 800 V 10 20 30 40 50 nC 65 Q Gate Typ. switching...
Description IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system
High Speed CMOS Logic Dual Decade Ripple Counters 16-PDIP -55 to 125 IGBT的(低正向压降高开关速度低尾电流的无闩锁雪崩额定

File Size 419.23K  /  7 Page

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    BUP303 Q67078-A4202-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP303 Q67078-A4202-A2
OCR Text ...rge VGE = (QGate) parameter: IC puls = 10 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 400 V 14 12 10 8 6 4 2 0 0 800 V 20 40 60 80 100 nC 130 Q Gate Typ. switch...
Description IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system

File Size 431.88K  /  7 Page

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    BUP304 Q67078-A4200-A2

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BUP304 Q67078-A4200-A2
OCR Text ...rge VGE = (QGate) parameter: IC puls = 20 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz VGE 16 14 12 10 8 6 4 2 0 0 400 V 800 V 20 40 60 80 100 120 140 nC 180 Q Gate Typ....
Description From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated) 35 A, 1000 V, N-CHANNEL IGBT, TO-218

File Size 378.68K  /  7 Page

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For puls Found Datasheets File :: 3095    Search Time::1.297ms    
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