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				Samsung semiconductor
Part No.	K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D263238G-GC36
OCR Text	...rite masking only * Auto & Self refresh * 32ms refresh period (4k cycle) * 144-Ball FBGA * Maximum clock frequency up to 350MHz * Maximum data rate up to 700Mbps/pin ORDERING INFORMATION Part NO. K4D263238G-GC2A K4D263238G-GC33 K4D26323...
Description	128Mbit GDDR SDRAM
File Size	322.51K / 17 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4D263238M K4D263238M-QC45 K4D263238M-QC50 K4D263238M-QC55 K4D263238M-QC60
OCR Text	...ating Condition table * Changed refresh cycle time from 16ms to 32ms.Accordingly, tREF has been changed from 3.9us to 7.8us. * Changed IIL,I...4k cycle) * 100pin TQFP package * Maximum clock frequency up to 222MHz * Maximum data rate up to 444...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	280.12K / 19 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D26323RA-GC36 K4D26323RA-GC
OCR Text	...rite masking only * Auto & Self refresh * 32ms refresh period (4k cycle) * 144-Ball FBGA * Maximum clock frequency up to 350MHz * Maximum data rate up to 700Mbps/pin ORDERING INFORMATION Part NO. K4D26323RA-GC2A K4D26323RA-GC33 K4D26323...
Description	1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
File Size	300.83K / 18 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text	...ion DQM for masking Auto & self refresh 64ms refresh period (4k cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S4030C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, ...
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416S8030B KM416S8030BT-G_F8 KM416S8030BT-G_FH KM416S8030BT-G_FL KM416S8030BT-G_F10 KM416S8030BT-G_FA KM416S8030BT-G/F10 KM416S8030BT-G/F8 KM416S8030BT-G/FA KM416S8030BT-G/FH KM416S8030BT-G/FL
OCR Text	...* DQM for masking * Auto & self refresh * 64ms refresh period (4k cycle) Part No. KM416S8030BT-G/FA KM416S8030BT-G/F8 KM416S8030BT-G/FH KM416S8030BT-G/FL CMOS SDRAM GENERAL DESCRIPTION The KM416S8030B is 134,217,728 bits synchronous ...
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM00万16 × 4银行同步DRAM LVTTL
File Size	132.04K / 11 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL
OCR Text	...* DQM for masking * Auto & self refresh * 64ms refresh period (4k cycle) Preliminary CMOS SDRAM GENERAL DESCRIPTION The KM416S8030 is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 16 bits...
Description	2M x 16Bit x 4 Banks Synchronous DRAM
File Size	116.68K / 10 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M32000D3FP
OCR Text	... control internal DRAM control, refresh control power management function (standby mode, CPU sleep mode selection control) internal DRAM ...4k-byte cache memory * CPU, cache and internal DRAM are connected by a 128-bit bus * selectable cach...
Description	SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
File Size	557.20K / 45 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	M32000D4BFP-80
OCR Text	... control internal DRAM control, refresh control power management function (standby mode, CPU sleep mode selection control) internal DRAM ...4k-byte cache memory * CPU, cache and internal DRAM are connected by a 128-bit bus * selectable cach...
Description	SINGLE-CHIP 32-BIT CMOS MICROCOMPUTER
File Size	438.60K / 44 Page	View it Online	Download Datasheet

				SONY[Sony Corporation]
Part No.	CXA2153 CXA2153S
OCR Text	...* Built-in VBLK synchronous DAC refresh system Applications High resolution computer displays Structure Bipolar silicon monolithic IC 30 pin...4k 16 I2C bus standard SDA (serial data) input/output. VILMAX = 1.5V VIHMIN = 3.5V VOLMAX = 0.4V ...
Description	Preamplifier for High Resolution Computer Display
File Size	185.03K / 24 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4F170811D K4F170812D K4F160811D K4F160812D
OCR Text	...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4k Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description	2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
File Size	224.28K / 20 Page	View it Online	Download Datasheet

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