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    Vishay
Part No. PRAHT135
OCR Text ...cated in the table here above, taking into acco unt the minimum order quantity. when quantity ordered exceeds maximum quantity of a single waffle pack, the waffle packs are stacked up on the top of each other and closed by one single co...
Description (PRAHT100 - PRAHT182) Thin Film Wraparound Chip Resistor Arrays

File Size 112.82K  /  4 Page

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    5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 5962D0053601TXC 5962D0053602QXA 5962D0053602TUC 5962D0053602QXC 5962D005

Aeroflex Circuit Technology
Part No. 5962D0053601QUA 5962D0053601TXA 5962D0053602TXA 5962D0053601TXC 5962D0053602QXA 5962D0053602TUC 5962D0053602QXC 5962D0053603QUA 5962D0053601TUA 5962D0053601QXX 5962D0053601TUC 5962D0053601TUX 5962D0053602TUX 5962D0053602QUX 5962D0053602TXX 5962D0053602QXX 5962D0053602QUA 5962D0053601QXA 5962D0053601TXX 5962D0053602QUC 5962D0053602TXC 5962D0053601QXC 5962D0053602TUA 5962D0053601QUX 5962D0053601QUC 5962D0053603QUX 5962D0053603QXA 5962D0053603QXX 5962D0053603QXC 5962D0053603QUC UT9Q512-IWX UT9Q512-IWC UT9Q512-20ICC UT9Q512-20ICX UT9Q512-20IPC UT9Q512-20IWC UT9Q512-20UCC UT9Q512-20UCA UT9Q512-20UCX UT9Q512-20UWA UT9Q512-ICA UT9Q512-IPC UT9Q512-20ICA UT9Q512-20IWA UT9Q512-20IWX UT9Q512-20UPC UT9Q512-20UWC UT9Q512-20UWX UT9Q512-ICC UT9Q512-ICX UT9Q512-IWA UT9Q512-UCA 5962D0053603TXC 5962D0053604TXC 5962L0053601TXC 5962L0053602TXC 5962L0053603TXC 5962L0053604TXC 5962P0053601TXC 5962P0053602TXC 5962P0053603TXC 5962P0053604TXC 5962L0053601QUA 5962L0053601QUC 5962L0053601QUX 5962L0053601QXA 5962L0053601QXC 5962L0053601QXX 5962L0053601TUA 5962L0053601TUC 5962L0053601TUX 5962L0053601TXX 5962L0053602QUA 5962L0053602QUC 5962L0053602QUX 5962L0053602QXA 5962L0053602QXC 5962L0053602TUA 5962L0053602
OCR Text ...the devic e i s accomplished by taking chip enable o ne ( e ) input low and write enable ( w ) inputs low. data on the eight i/o pins (dq 0 through dq 7 ) is then written into the location specified on the address pins (a 0 thro...
Description 512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish factory option.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM. 20ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish hot solder dipped.
512K x 8 SRAM MCM. 25ns access time, 5.0V operation. Lead finish gold. Prototype flow.
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 5E4(50krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 25ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class T. Lead finish factory option. Total dose 1E4(10krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish hot solder dipped. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish gold. Total dose 3E4(30krad(Si)).
512K x 8 SRAM MCM: SDM. 20ns access time, 5.0V operation. QML class Q. Lead finish factory option. Total dose 3E4(30krad(Si)).

File Size 128.60K  /  15 Page

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    INTERSIL CORP
Part No. HM6-6642B-9
OCR Text ...edge. the output is disabled by taking the output enable g low: the programming pin is enabled by taking (p) high. 2. v cc is raised to the programming voltage level, 12.5v. 3. all data output pins are pulled up to v cc program. then th...
Description 512 X 8 OTPROM, 140 ns, CDIP24

File Size 80.43K  /  8 Page

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    NCP434

ON Semiconductor
Part No. NCP434
OCR Text ... ic mosfet. i: load dc current. taking into account of r obtain with: ? 1 oz, 2 layers: 100 c/w. at 2 a, 25 c ambient temperature, r ds(on) 44 m @ v in 1.8 v, the junction temperature will be: t j r ja p d 25 0.044 2 ...
Description 2A Ultra-Small Controlled Load Switch with

File Size 697.31K  /  10 Page

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