vceo-600v pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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vceo-600v Datasheet PDF File

For vceo-600v Found Datasheets File :: 273 Search Time::1.234ms
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				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-2HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=75A, IB1=150mA, IB2=-1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	76.06K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=75A, IB1=-IB2=1.5A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Condu...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	81.92K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=100mA -IC=75A (diode forward voltage) IC=75A, ...
Description	75 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR HIGH POWER SWITCHING USE INSULATED TYPE
File Size	84.32K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75DY-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	78.28K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor Mitsubishi Electric Corporation
Part No.	QM30TF-HB
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=30A, IB=40mA -IC=30A (diode forward voltage) IC=30A, V...
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE
File Size	86.89K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	QM200HA-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=200A, IB1=-IB2=4A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. ...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	64.85K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric, Corp. Mitsubishi Electric Semiconductor
Part No.	QM30HY-2H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ....
Description	MEDIUM POWER SWITCHING USE INSULATED TYPE 中功率开关使用绝缘型
File Size	69.83K / 5 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	QM75HA-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=75A, IB=1A -IC=75A (diode forward voltage) IC=75A, VCE...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	60.37K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
Part No.	QM500HA-H QM500
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=500A, IB=0.67A -IC=500A (diode forward voltage) IC=500...
Description	HIGH POWER SWITCHING USE INSULATED TYPE
File Size	65.35K / 5 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	QM400HA-H
OCR Text	... ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal r...600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=400A, IB=0.53A -IC=400A (diode forward voltage) IC=400...
Description	400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR HIGH POWER SWITCHING USE INSULATED TYPE
File Size	64.64K / 5 Page	View it Online	Download Datasheet

For vceo-600v Found Datasheets File :: 273 Search Time::1.234ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |