vds-100v pdf Datasheet P8 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 30100 STPS0520 MEH18XBA 2N5467 RT3140 25000 1N4901 42XL009
	Product Description
	Full Text Search

vds-100v Datasheet PDF File

For vds-100v Found Datasheets File :: 4880 Search Time::1.61ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	PHX7N60E
OCR Text	...DITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 0.25 mA MIN. 600 2.0 3 TYP. MAX. UNIT 0.1 0.9 3.0 4.5 2 50 10 54 5.5 30 17 31 88 34 4.5 7.5 ...100V VDD = 480 V 200V PHP7N60E IF, Source-Drain diode current (Amps) VGS = 0 V PHP6N60 15 ...
Description	PowerMOS transistors Avalanche energy rated
File Size	75.58K / 8 Page	View it Online	Download Datasheet

				SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
Part No.	2SK2677
OCR Text	... V A S V ID = 1mA, VGS = 0V VDS = 900V, VGS = 0V VGS = 30V, VDS = 0V ID = 5A, VDS = 10V ID = 5A, VGS = 10V ID = 1mA, VDS = 10V IS = 5A, ...100V VGS = 15V 0V Rg = 35 IAS = 10A 10 Single Avalanche Current IAS [A] EAR = 26mJ E...
Description	HVX-2 Series Power MOSFET(900V 10A)
File Size	417.58K / 12 Page	View it Online	Download Datasheet

				FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	2SK3608-01L 2SK3608-S 2SK3608-SJ 2SK3608
OCR Text	...t Max. power dissipation Symbol VDS VDSX 5 ID ID(puls] VGS IAS 2 EAS 1 dVDS/dt 4 dV/dt *3 PD Ta=25C Tc=25C Ratings 200 170 13 52 30 13 1...100V ID=13A VGS=10V L=100H Tch=25C IF=13A VGS=0V Tch=25C IF=13A VGS=0V -di/dt=100A/s Tch=25C Tch=25C...
Description	N-CHANNEL SILICON POWER MOSFET N-CHANNEL SILICON POWER MOSFET 18 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	120.72K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
Part No.	APT5010B2VFR
OCR Text	...0 47 0.100 250 1000 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	64.50K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technolo...
Part No.	APT5010B2VR APT5010B2VRG
OCR Text	...500 47 0.100 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE...
Description	POWER MOS V 500V 47A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. New T-MAX?Package (Clip-mounted TO-247 Package)
File Size	61.66K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT5010JN APT5012JN APT5012
OCR Text	... 500 500 48 Amps ID(ON) (VDS > I D(ON) x R DS(ON) Max, VGS = 10V) Drain-Source On-State Resistance (VGS = 10V, 0.5 ID [Cont.]) Zero G...100V VDS=250V 16 160 12 VDS=400V 8 120 TJ =+150C 80 4 40 TJ =+25C TJ =-55C ...
Description	POWER MOS IV 500V 48.0A 0.10 Ohm / 500V 43.0A 0.12 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS N沟道增强型高压功率MOSFET
File Size	60.42K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	...0 44 0.100 250 1000 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU2
OCR Text	...500 44 0.100 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	110.72K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5010JVRU3
OCR Text	...500 44 0.100 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	111.65K / 7 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...500 44 0.100 25 250 100 2 4 (VDS > I D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 ID[Cont.]...100V VDS=250V 12 VDS=400V 8 10 5 4 100 200 300 400 500 Qg, TOTAL GATE CHARGE (nC) FIGURE...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

For vds-100v Found Datasheets File :: 4880 Search Time::1.61ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |