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  vgss Datasheet PDF File

For vgss Found Datasheets File :: 9579    Search Time::1.016ms    
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    2SJ530S

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SJ530S
OCR Text ...10 s, duty cycle 1% Symbol VDSS vgss ID ID PD Tch Tstg Rating -60 20 -15 -60 30 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off...
Description Hight Speed Power Switching

File Size 41.22K  /  1 Page

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    2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00

NEC[NEC]
Part No. 2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text ...nt (pulse) Note2 Note1 VDSS vgss(AC) vgss(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 20 # 80 Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Stora...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 70.31K  /  8 Page

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    2SJ493 D11265EJ3V0DS00

NEC[NEC]
Part No. 2SJ493 D11265EJ3V0DS00
OCR Text ...nt (pulse) Note2 Note1 VDSS vgss(AC) vgss(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 # 20 V V V A A W W C C A mJ -20, 0 # 16 # 64 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Stora...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 64.87K  /  8 Page

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    2SJ494 D11266EJ2V0DS00

NEC[NEC]
Part No. 2SJ494 D11266EJ2V0DS00
OCR Text ...rature Storage Temperature VDSS vgss (AC) vgss (DC) ID (DC) ID (pulse) PT PT Tch Tstg -60 - +20 -20, 0 - +20 - +80 35 2.0 150 -55 to +150 V V V A A W W C C 1.30.2 1.50.2 2.54 2.50.1 0.650.1 1. Gate 2. Drain 3. Source 123 ISOLATE...
Description From old datasheet system
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 68.73K  /  8 Page

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    2SJ495 2SJ295 D11267EJ2V0DS00

NEC[NEC]
Part No. 2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text ...**PW 10 s, Duty Cycle 1% VDSS vgss(AC) vgss(DC) ID(DC) ID(pulse) PT PT Tch Tstg -60 m20 -20, 0 m30 m120 35 2.0 150 -55 to +150 V V V A A W W C C 123 0.7 0.1 2.54 13.5 MIN. 2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source Drain Body Dio...
Description From old datasheet system
MOS Field Effect Power Transistors
SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE

File Size 72.23K  /  8 Page

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    2SJ529S

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SJ529S
OCR Text ...10 s, duty cycle 1% Symbol VDSS vgss ID ID PD Tch Tstg Rating -60 20 -10 -40 20 150 -55 to +150 Unit V V A A W Electrical Characteristics Ta = 25 Parameter Drain to source breakdown voltage Gate to source breakdown voltage Drain cut-off...
Description Hight Speed Power Switching

File Size 41.24K  /  1 Page

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    CPH5854

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. CPH5854
OCR Text ...5 --55 to +125 V V A A C C VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit --30 20 --2 --8 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : YG Any and all SAN...
Description MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device MOSFET的:P沟道MOSFET的硅SBD智能交通:肖特基二极管通用开关设

File Size 47.37K  /  6 Page

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    CPH5852

Sanyo Semicon Device
Part No. CPH5852
OCR Text ...5 --55 to +125 V V A A C C VDSS vgss ID IDP PD Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (600mm2!0.8mm) 1unit --30 20 --2 --8 0.9 150 --55 to +125 V V A A W C C Symbol Conditions Ratings Unit Marking : YE Any and all SAN...
Description MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode

File Size 48.04K  /  6 Page

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    2SJ387S

Guangdong Kexin Industrial Co.,Ltd
Part No. 2SJ387S
OCR Text ...re * PW 10 s; d 1%. Symbol VDSS vgss ID ID PD Tch Tstg Rating -20 10 -10 -40 20 150 -55 to +150 Unit V V A A W 3.80 2.5 V Gate drive device can be driven from 3 V Source www.kexin.com.cn 1 SMD Type SMDType 2SJ387S Electrica...
Description Silicon P-Channel MOSFET

File Size 44.36K  /  2 Page

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    KPA2790GR

Guangdong Kexin Industrial Co.,Ltd
Part No. KPA2790GR
OCR Text ...10 s, Duty Cycle 1% Symbol VDSS vgss ID(DC) ID(pulse) PT PT Tch Tstg IAS EAS 6 3.6 N-Channel 30 20 6 24 1.7 2 150 -55 to +150 -6 3.6 A mJ P- Channel -30 20 6 24 Unit V V A A W W *2 Mounted on ceramic substrate of 2000 mm2 x 1.6 mm *3 Sta...
Description MOS Field Effect Transistor

File Size 54.78K  /  2 Page

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For vgss Found Datasheets File :: 9579    Search Time::1.016ms    
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