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				Nexperia
Part No.	PMZ130UNE
OCR Text	...yp max unit [1] - 315 360 k/w r th(j-a) thermal resistance from junction to ambient in free air [2] - 145 165 k/w r th(j-sp) thermal resistance from junction to solder point - 17 20 k/w [1] device mounted on an fr4 pcb, single-sided copper,...
Description	20 V, N-channel Trench MOSFET
File Size	314.36K / 14 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSC010NE2LS
OCR Text	... ma gate threshold voltage v gs(th) 1- 2.2 v ds = v gs , i d =250 a zero gate voltage drain current i dss -0.110a v ds =25 v, v gs =0 v, t j =25 c - 10 100 v ds =25 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na...
Description	n-Channel Power MOSFET
File Size	1,372.50K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSC011N03LS
OCR Text	... ma gate threshold voltage v gs(th) 1- 2.2 v ds = v gs , i d =250 a zero gate voltage drain current i dss -0.11a v ds =30 v, v gs =0 v, t j =25 c - 10 100 v ds =30 v, v gs =0 v, t j =125 c gate-source leakage current i gss - 10 100 na ...
Description	n-Channel Power MOSFET
File Size	1,370.49K / 12 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSZ035N03LSG
OCR Text	...- v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2.2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20...
Description	OptiMOS? Power-MOSFET
File Size	330.96K / 9 Page	View it Online	Download Datasheet

				Analog Devices
Part No.	ZLF645
OCR Text	...ash mc u u ir sol ut ion w i th z ba s e ? databa s e p b 019710-0308 ? crimzon z8 lxmc core ? 32/64 kb flash memory ? 512 b/1 kb ram ? up to 40 i/o pins ? built-in ir timer ? patented t8/t16 timer pair ? high and low vol...
Description	Ir Solutions
File Size	371.49K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSZ130N03LSG
OCR Text	...- v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1 - 2.2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20...
Description	OptiMOS? Power-MOSFET
File Size	331.60K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	BSZ130N03MSG
OCR Text	...- v gate threshold voltage v gs(th) v ds = v gs , i d =250 a 1-2 zero gate voltage drain current i dss v ds =30 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =30 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =16 v, ...
Description	OptiMOS? M-Series Power-MOSFET
File Size	325.86K / 9 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK3A65DA
OCR Text	... 650 v) ? enhancement mode: v th = 2.4 to 4.4 v (v ds = 10 v, i d = 1 ma) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss 650 v gate-source voltage v gss 30 v dc (n...
Description	Power MOSFET (N-ch 500V<VDSS≤700V)
File Size	201.17K / 6 Page	View it Online	Download Datasheet

				NXP Semiconductors Philips
Part No.	BUJ103AD
OCR Text	...r conditions min typ max unit r th(j-mb) thermal resistance from junction to mounting base see figure 2 - - 1.56 k/w r th(j-a) thermal resistance from junction to ambient [1] - 75 - k/w fig 2. transient thermal impedance from junction to mo...
Description	Silicon diffused power transistor
File Size	70.24K / 12 Page	View it Online	Download Datasheet

				Dallas Semiconductor
Part No.	DS1689S DS1689SR DS1689ST
OCR Text	...access time of the ds1689 since th e bus change from address to data occurs during the internal ram access time. addresses must be valid prior to the latter portion of ale, at which time the ds1689/ds1693 latches the address. valid writ...
Description	3V/5V Serialized Real-Time Clocks with NV RAM Control
File Size	597.65K / 36 Page	View it Online	Download Datasheet

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