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SamHop Microelectronics...
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Part No. |
STUD438S
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OCR Text |
...aximum ratings v gs =0v,i s =6a 0.78 1.3 v i s maximum continuous drain-source diode forward current 6 a notes nc 12 v ds =20v,i d =25a,v gs...5 1.7 3 60 a bv dss 45 v drain-source breakdown voltage v gs =0v , i d =10ma d _ _
stu/d438s ver 1... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
109.42K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD441S
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OCR Text |
... to - 2 5 1 ( i - p a k ) ver 1.0 symbol v ds v gs i dm e as w a p d c 27 -55 to 150 i d units parameter -40 -27 -82 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj absolute maximum ratings ( t a =25 c... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
119.75K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD442S
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OCR Text |
...aximum ratings v gs =0v,i s =2a 0.81 1.2 v i s maximum continuous drain-source diode forward current 2 a notes nc 6.3 v ds =20v,i d =15a,v g...5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown volta... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
119.69K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD449S
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OCR Text |
...1 ( i - p a k ) stu/d449s ver 1.0 green product features super high dense cell design for low r ds(on) . rugged and reliable. to-252 and to-...5 ns t d(off) 5.5 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-sou... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
121.03K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD452S
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OCR Text |
...46 42 green product 40 27 ver 1.0
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) v 8 g fs s c iss 1370 pf c oss 220 pf c rss...5 13 m ohm c f=1.0mhz c stu/d452s www.samhop.com.tw dec,10,2009 2 v sd nc q gs nc q gd 3 6.8 gate-dr... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
122.98K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD456A
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OCR Text |
...aximum ratings v gs =0v,i s =2a 0.785 1.3 v notes nc 6 v ds =20v,i d =15a,v gs =10v v ds =20v,i d =15a,v gs =4.5v a.surface mounted on fr4 b...5. gate threshold variation with temperature tj, junction temperature( c) figure 6. breakdown volta... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
118.51K /
10 Page |
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SamHop Microelectronics...
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Part No. |
STUD456S
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OCR Text |
...88 42 green product 24 27 ver 1.0
symbol min typ max units bv dss 40 v 1 i gss 100 na v gs(th) v 19 g fs s c iss 705 pf c oss 79 pf c rss 61 pf q g 13.3 nc 11.5 18 22 t d(on) 11.5 ns t r ns t d(off) ns t f ns v ds =20v,v gs =0v switching ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
120.25K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD458S
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OCR Text |
...aximum ratings v gs =0v,i s =5a 0.77 1.3 v notes nc 15.5 v ds =20v,i d =24a,v gs =10v v ds =20v,i d =24a,v gs =4.5v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not sub... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
107.30K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STM6716
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OCR Text |
...le. suface mount package. ver 1.0 dec,19,2014
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v 10 g fs s c iss 2578 pf c oss...5 12 16 m ohm b f=1.0mhz b www.samhop.com.tw 2 v sd nc q gs nc q gd 3.4 7.4 gate-drain charge gate-s... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
115.26K /
8 Page |
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SamHop Microelectronics...
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Part No. |
STUD10N20
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OCR Text |
...t-continuous -pulsed ac a ver 1.0 www.samhop.com.tw aug,14,2014 1 details are subject to change without notice. t c =25 c g g s s d d g g s s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) s t d s e ri e s to - 2 5 1 ( i - p a k ) w p d c -5... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
118.12K /
10 Page |
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