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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	K4S643232F-TL45 K4S643232F-TL55 K4S643232F-TL70 K4S643232F-TC70 K4S643232F-TC60 K4S643232F K4S643232F-TC45 K4S643232F-TC50 K4S643232F-TC55 K4S643232F-TL50 K4S643232F-TL60
OCR Text	0 January 2002 Samsung Electronics reserves the right to change products or specification without notice. -1- Rev. 1.0 (Jan. 2002) ...6us refresh duty cycle CMOS SDRAM GENERAL DESCRIPTION The K4S643232F is 67,108,864 bits synchro...
Description	IR LED 950NM 18 DEG DOUBLE END 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
File Size	100.27K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S161622D-TC/L10 K4S161622D-TC/L55 K4S161622D-TC/L60 K4S161622D-TC/L70 K4S161622D-TC/L80
OCR Text	...IN TSOP (II) (400mil x 825mil) (0.8 mm PIN PITCH) PIN FUNCTION DESCRIPTION Pin CLK CS Name System Clock Chip Select Input Function Activ...6us or a burst of 2048 auto refresh cycles once in 32ms. PRECHARGE The precharge operation is pe...
Description	512K x 16Bit x 2 Banks Synchronous DRAM 12k × 16 × 2银行同步DRAM
File Size	1,088.41K / 41 Page	View it Online	Download Datasheet

				Samsung Electronic
Part No.	K4S161622D-TC/L/I/P
OCR Text	...trial Temperature Revision 1.0 June 1999 Samsung Electronics reserves the right to change products or specification without notice. ...6us refresh duty cycle (2K/32ms) Industrial temperature range : -40C to +85C GENERAL DESCRIPTION ...
Description	512K x 16Bit x 2 Banks Synchronous DRAM Data Sheet
File Size	1,088.42K / 43 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC70 K4S643232C-TC55 K4S643232C-TC80 K4S643232C-TC60 K4S643232C-TL60 K4S643232C-TL70 V62C5181024LL-70P K4S643232C-TL10
OCR Text	...e 3 CMOS SDRAM Revision 1.0 (October, 1999) * Changed part number from KM432S2030CT-G/F to K4S643232C-TC/TL according to re-organized...6us refresh duty cycle CMOS SDRAM GENERAL DESCRIPTION The K4S643232C is 67,108,864 bits synch...
Description	ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External Components- Fully Encapsulated- Efficiency to 70% Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85 Replaced by TLC2201A : Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85 Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC Low Noise Precision Advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
File Size	1,165.47K / 43 Page	View it Online	Download Datasheet

				Data Delay Devices
Part No.	3D7608
OCR Text	...llel interface Increment range: 0.25ns through 800us Pulse width tolerance: 1% (See Table 1) Supply current: 8mA typical Temperature stabili...6us 510us 5.2us 1.28ms 13us 2.55ms 26us 5.10ms 52us 12.8ms 128us Maximum P.W. (12-Bit) 1.03us ...
Description	(3D7608 / 3D7612) 8-BIT & 12-BIT PROGRAMMABLE PULSE GENERATORS
File Size	201.22K / 7 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4S161622D-TI/E10 K4S161622D-TI/E50 K4S161622D-TI/E55 K4S161622D-TI/E60 K4S161622D-TI/E70 K4S161622D-TI/E80 DSK4S161622D
OCR Text	...E Revision History Revision 1.0 (June 1999) * Define Industrial Temperature spec of K4S161622D CMOS SDRAM Revision 1.1 (June 2001) ...6us refresh duty cycle (2K/32ms) Extended temperature range : -25C to +85C Industrial temperature ra...
Description	1M x 16 SDRAM 100万16内存
File Size	685.66K / 43 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MC33889DDW/R2 MCZ33889DEG/R2 MCZ33889BEG/R2 MC33889BDW/R2
OCR Text	0, 12/2006 System Basis Chip with Low Speed Fault Tolerant CAN Interface An SBC device is a monolithic IC combining many functions repea...6us 8 16 30 25us loop time Tx to Rx, with bus failure and +-1.5V gnd shift, tLOOPRD/DR-F+GS 5 nod...
Description	System Basis Chip with Low Speed Fault Tolerant CAN Interface
File Size	538.63K / 60 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S643232E-TP60 K4S643232E-TP70 K4S643232E-TI K4S643232E-TI60 K4S643232E-TI70
OCR Text	...ded CAS Latency 1 Revision 1.0 (January 12, 2000) * Final spec Revision 0.0 (December 20, 2000) - Preliminary Spec. * Initial draft ...6us refresh duty cycle(4K/64ms) CMOS SDRAM GENERAL DESCRIPTION The K4S643232E is 67,108,864 bit...
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL CONNECTOR ACCESSORY IR LED 880NM 40 DEG SIDE VIEW
File Size	98.65K / 12 Page	View it Online	Download Datasheet

				ACE Technology Co., LTD.
Part No.	ACE517 ACE517GMH ACE517OMH
OCR Text	...age Temperature Range Max Unit -0.3 to 7 V -0.3 to 7 V O 125 C O -40 to 85 C -40 to 150 OC VER 1.2 1 ACE517 ...6us. For example, when a dimming signal of 20KHz is applied, the minimum range of dimming is about 1...
Description	WLED Linear Driver for Li-lon Battery Application
File Size	205.41K / 8 Page	View it Online	Download Datasheet

				Excel Semiconductor
Part No.	EX29DL320
OCR Text	0 Volt-only, Simultaneous Operation Flash Memory GENERAL FEATURES * Single power supply operation - 2.7V - 3.6V for read, program and er...6us/byte, 8us/word ( typical ) - Accelerated program time : 4us/word ( typical ) - Sector erase time...
Description	Simultaneous Operation Flash Memory
File Size	864.65K / 59 Page	View it Online	Download Datasheet

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