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Cree, Inc
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Part No. |
CGHV14250-TB CGHV14250F CGHV14250F-AMP CGHV14250P CGHV14250P-AMP
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OCR Text |
1 cghv14250 250 w, 1200 - 1400 mhz, gan hemt for l-band radar systems crees cghv14250 is a gallium nitride (gan) high electron mobility tran...16w, 0603, 1%, 562 ohms 1 r2 res, 5.1 ohm, +/-1%, 1/16w, 0603 1 r3 res, 1/16w, 0603, 1%, 4700 ohms 1... |
Description |
250 W, 1200 - 1400 MHz, GaN HEMT for L-Band Radar Systems
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File Size |
829.55K /
11 Page |
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Cree, Inc
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Part No. |
CGH40010F-TB CGH40010P
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OCR Text |
1 cgh40010 10 w, rf power gan hemt crees cgh40010 is an unmatched, gallium nitride (gan) high electron mobility transistor (hemt). the cgh4...16w,0603,1%,0 ohms 1 r3 res,1/16w,0603,1%,47 ohms 1 r4 res,1/16w,0603,1%,100 ohms 1 c6 cap, 470pf, 5... |
Description |
10 W, RF Power GaN HEMT
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File Size |
1,368.78K /
15 Page |
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it Online |
Download Datasheet |
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Maxim
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Part No. |
DS33Z11DK
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OCR Text |
... Sheet o Configuration Files
1 of 39
REV: 042205
DS33Z11DK
TABLE OF CONTENTS
GENERAL DESCRIPTION .................................16W 1% RES 0603 49.9 Ohm 1/16W 1% RES 0603 10.0K Ohm 1/16W 1% - Must be 1% tolerance RES 0603 1.0K O... |
Description |
Ethernet Transport Design Kit From old datasheet system
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File Size |
2,221.53K /
39 Page |
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it Online |
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NXP Semiconductors N.V.
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Part No. |
BLF7G27L-90P BLF7G27LS-90P
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OCR Text |
1. product profile 1.1 general description 90 w ldmos power transistor for base station applications at frequencies from 2500 mhz to 2700 m...16w 0.4 k/w table 6. characteristics t j = 25 ? c; per section unless otherwise specified. symbol ... |
Description |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
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File Size |
951.03K /
14 Page |
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it Online |
Download Datasheet |
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Price and Availability
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