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  12.2-12.8ghz Datasheet PDF File

For 12.2-12.8ghz Found Datasheets File :: 792    Search Time::1.672ms    
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    2SC5502

Sanyo Semicon Device
Part No. 2SC5502
OCR Text ...: MCP4 0.7 0.9 Ratings 20 12 2 100 500 150 -55 to +150 Unit V V V mA mW C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Reverse Transfe...
Description NPN Epitaxial Planar Silicon Transistor High-Frequency Low-Noise Amplifier Applications

File Size 43.12K  /  6 Page

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    BFP640

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BFP640
OCR Text ...dB G ms - G ma - 12.5 - dB |S21e|2 IP 3 21 10.5 26.5 - dB dBm P-1dB - 13 - 3 Apr-21-2004 BFP640 SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VA...
Description    NPN Silicon Germanium RF Transistor

File Size 270.21K  /  8 Page

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    BFR340F

INFINEON[Infineon Technologies AG]
Part No. BFR340F
OCR Text ... 16 - - Gma - 12 - dB |S21e|2 IP3 13 9.5 13 - dB dBm P-1dB - 0 - 3 Jul-01-2003 BFR340F SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax): Transitor Chip Data: IS = VAF = N...
Description RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators

File Size 150.45K  /  8 Page

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    FLU17ZM

Fujitsu Microelectronics
Fujitsu Component Limited.
Part No. FLU17ZM
OCR Text 12.5dB(typ.) Low Cost Plastic(SMT) Package Tape and Reel Available L-Band Medium & High Power GaAs FET DESCRIPTION The FLU17ZM is a Ga...2.0GHz, IDS=0.6IDSS(Typ.) Channel to Case Min. -1.0 -5 31.5 11.5 Limit Typ. 600 300 -2.0 32.5 12.5 1...
Description From old datasheet system
L-Band Medium & High Power GaAs FET

File Size 229.77K  /  8 Page

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    BGC405

Infineon Technologies AG
Part No. BGC405
OCR Text ...ing point 1) Symbol Unit 12 4.5 54 Vcc+0.5 380 150 -65...+150 -65...+150 530 mA V mW V A C C C K/W 120C 1) ICC Vcc Ptot Vc ...2) 3) Unit 2 Min 19.5 16.5 Typ 21 18 1.8 2.0 1 0.5 15 15 5 8 1.5 3 3.7 2.5 <10 35 -60 Vcc...
Description Active Biased RF Transistor (RF MMIC)
Self-Biased BFP405

File Size 119.39K  /  10 Page

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    BGC420 Q62702-G0092

INFINEON[Infineon Technologies AG]
Part No. BGC420 Q62702-G0092
OCR Text ... 0 2 4 6 8 10 12 14 16 GHz f Icc mA S212 versus Frequency and Temperature Vcc=3V, Icc=7mA 28 26 dB 24 22 20 = -40C = +27C S21 2 18 16 14 12 10 0.2 = +85C 0.6 1 1.4 1.8 2...
Description Self-Biased BFP420
From old datasheet system

File Size 102.18K  /  11 Page

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    AT-113 AT-303 AT-210 AT-320 AT-100 AT-101 AT-102 AT-103 AT-104 AT-105 AT-106 AT-107 AT-108 AT-109 AT-110 AT-112 AT-114 A

HIROSE[Hirose Electric]
Part No. AT-113 AT-303 AT-210 AT-320 AT-100 AT-101 AT-102 AT-103 AT-104 AT-105 AT-106 AT-107 AT-108 AT-109 AT-110 AT-112 AT-114 AT-115 AT-120 AT-126 AT-203 AT-206 AT-220 AT-306 AT-310
OCR Text ... to 10 dB in 1 dB steps, and in 12, 13, 15, 20, 26 and 30 dB so that levels can be finely adjusted. AT-103 2.SMA Type The coupling portions are available in all types of plug and jack combinations and stainless steel is used for the ex...
Description Fixed Attenuators (SMA Type)

File Size 62.40K  /  3 Page

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    SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. CLY2 Q62702-L96
OCR Text ... VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 600 150 -55...+150 900 Unit V V V mA C C mW RthChS 110 K/W 1) Dimensions see chapter Package Outlines 2) TS is measured on the source lead at the soldering point to the pcb. Siemens Ak...
Description GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz) 砷化镓场效应管(功放为频率高千兆赫移动电话)
From old datasheet system

File Size 52.08K  /  7 Page

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