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120 250 Datasheet PDF File

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				ON Semiconductor
Part No.	NGTB25N120LWG
OCR Text	...) 5 4 3 2 1 0 0 20 40 60 80 100 120 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter v...250 10 v ce = 600 v v ge = 15 v i c = 25 a rg = 10 200 v 400 v 600 v 160 v ce = 600 v v ge =...
Description	Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage. IGBT
File Size	173.05K / 9 Page	View it Online	Download Datasheet

				http:// PANASONIC[Panasonic Semiconductor] Panasonic Corporation
Part No.	2SC829 2SC829B 2SC829C
OCR Text	... 150 100 50 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 400 40 25C 30 Ta=75C 20 -25C 4 2 20A 10 0 0 6 ...250 Ta=75C 200 25C 150 -25C 100 Base current IB (A) 80 60 40 25C 0.1 Ta=75C 20 ...
Description	Silicon NPN epitaxial planer type(For high-frequency amplification) TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 30MA I(C) \| TO-92 Low-Power, Single/Dual-Voltage µP Reset Circuits with Capacitor-Adjustable Reset Timeout Delay
File Size	54.87K / 3 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NGTB25N120IHLWG
OCR Text	...) 5 4 3 2 1 0 0 20 40 60 80 100 120 figure 3. output characteristics figure 4. typical transfer characteristics v ce , collector ? emitter v...250 10 160 v ce = 600 v v ge = 15 v i c = 25 a rg = 10 200 v 400 v 600 v 160 v ce = 600 v v g...
Description	Incorporated into the device is a rugged co?packaged free wheeling diode with a low forward voltage.
File Size	169.31K / 9 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NGTB25N120FLWG
OCR Text	...2.0 1.5 1.0 0.5 0 0 20 40 60 80 120 i c , collector current (a) i c , collector current (a) capacitance (pf) i f , forward current (a) v ge ...250 200 150 100 50 0 67 8 10 v 11 v 9 v 8 v 7 v 10 v v ge = 20 to 15 v 300 250 200 150 100 50 0 5 4...
Description	IGBT
File Size	182.20K / 10 Page	View it Online	Download Datasheet

				eupec GmbH
Part No.	TT240N TD240N
OCR Text	...] 0 0 180 = 30 60 90 120 180 transienter innerer w?rmewiderstand je zweig / transient thermal impedance per arm z thjc = f(t) si...250 300 350 400 450 i tavm [a] t c [c] = 30 60 90 120 180 0 0 180 h?chstzul?ssige geh?usetemper...
Description	Netz-Thyristor-Modul Phase Control Thyristor Module
File Size	396.47K / 13 Page	View it Online	Download Datasheet

				Fuji Electric
Part No.	2SK3590-01
OCR Text	120 continuous drain current i d 57 pulsed drain current i d(puls] 228 gate-source voltage v gs 30 non-repetitive avalanche current i a...250 a v gs =0v i d = 250 a v ds =v gs t ch =25...
Description	N-CHANNEL SILICON POWER MOSFET
File Size	99.22K / 4 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	SUP75N05-06 SUB75N05-06
OCR Text	...ea gfs VDS = 15 V, ID = 60 A 30 120 0.005 0.006 0.010 0.012 S W 50 V 2.0 4.0 "100 1 50 150 A m mA nA Symbol Test Condition Min T...250 VGS = 8, 9, 10 V 200 150 I D - Drain Current (A) 150 6V I D - Drain Current (A) 7V 200 Transf...
Description	N-Channel 50-V (D-S), 175C MOSFET N-Channel MOSFET N-Channel 50-V (D-S), 175C MOSFET N-Channel Enhancement-Mode Trans
File Size	36.23K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTM50DAM38CT
OCR Text	...50V CE 10 8 6 4 2 0 0 40 80 120 160 200 240 280 320 Gate Charge (nC) APTM50DAM38CT - Rev 1 May, 2004 VCE=400V 10 0 10 20 30 40 VDS,...250 200 150 100 50 0 20 30 40 50 60 70 80 ID, Drain Current (A) VDS=333V D=50% RG=2 TJ=125C VDS=333...
Description	Boost chopper SiC FWD diode MOSFET Power Module
File Size	312.75K / 7 Page	View it Online	Download Datasheet

				KEC(Korea Electronics)
Part No.	KMB080N75PA
OCR Text	...t i d (a) 0 0 4 8 12 16 20 60 120 300 240 180 fig 3. i d - v gs fig 2. r ds(on) - i d drain current i d (a) drain current i d ...250 a v gs = 0 250 s pulse test 150 c 25 c 0 0246810 60 120 300 240 180 7v 9v 10v 6v v gs =5v...
Description	N CHANNEL MOS FIELD EFFECT TRANSISTOR
File Size	476.99K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTM50AM35FT
OCR Text	...ain Current vs Case Temperature 120 ID, DC Drain Current (A) Normalized to VGS=10V @ 49.5A Transfert Characteristics VDS > ID(on)xRDS(o...250 300 350 Gate Charge (nC) May, 2004 VDS=400V ID=99A TJ=25C VDS=100V VDS=250V 1000 Crss...
Description	Phase leg MOSFET Power Module
File Size	297.64K / 6 Page	View it Online	Download Datasheet

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