200a 800v pdf Datasheet P9 Full Text Search --- IC-ON-LINE

200a 800v Datasheet PDF File

For 200a 800v Found Datasheets File :: 605 Search Time::5.359ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				Advanced Power Technology
Part No.	APT30D120BCT APT30D120BCTG
OCR Text	..., TC = 125C IF = 30A, diF/dt = -200a/s VR = 800v, TC = 125C IF = 30A, diF/dt = -200a/s VR = 800v, TC = 25C Test Conditions IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C MIN - APT30D120BCT(G) TYP MAX UNIT ns nC 31 370 660 5 500 3450 1...
Description	ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
File Size	120.56K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80A15SCT
OCR Text	... 30A IF = 30A VR = 133V di/dt = 200a/s IF = 30A VR = 133V di/dt = 200a/s Min Tc = 85C Typ 30 1.1 1.4 0.9 24 48 33 150 Max 1.15 V APTC80A15SCT - Rev 01 May, 2004 Unit A Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C trr Qrr Rev...
Description	Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module
File Size	314.63K / 7 Page	View it Online	Download Datasheet

				ADPOW Advanced Power Technology
Part No.	APTC80DDA15T3
OCR Text	...rge IF = 60A VR = 667V di/dt=200a/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 280 350 760 3600 ns nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. APT website - http://www.advancedpower.com ...
Description	Dual boost chopper Super Junction MOSFET Power Module
File Size	332.58K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80DDA29T3
OCR Text	...rge IF = 30A VR = 667V di/dt=200a/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 290 390 670 2350 ns nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. APT website - http://www.advancedpower.com ...
Description	Dual boost chopper Super Junction MOSFET Power Module
File Size	333.02K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80DSK15T3
OCR Text	...rge IF = 60A VR = 667V di/dt=200a/s Tj = 25C Tj = 125C Tj = 25C Tj = 125C 280 350 760 3600 ns nC Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. APT website - http://www.advancedpower.com ...
Description	Dual buck chopper Super Junction MOSFET Power Module
File Size	333.33K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80H15T3G
OCR Text	...A IS = - 28A VR = 400V diS/dt = 200a/s Tj = 25C Tj = 25C 550 30 1.2 6 V V/ns ns C APTC80H15T3G - Rev 1 December, 2005 dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 28A di/dt 200a/s VR ...
Description	Full - Bridge Super Junction MOSFET Power Module
File Size	336.12K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80TA15P
OCR Text	...A IS = - 28A VR = 400V diS/dt = 200a/s Tj = 25C Tj = 25C 550 30 1.2 6 V V/ns ns C APTC80TA15P - Rev 0 September, 2004 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limit...
Description	Triple phase leg Super Junction MOSFET Power Module
File Size	328.52K / 6 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APTC80TDU15P
OCR Text	...A IS = - 28A VR = 400V diS/dt = 200a/s Tj = 25C Tj = 25C 550 30 1.2 6 V V/ns ns C APTC80TDU15P - Rev 0 September, 2004 Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limi...
Description	Triple dual Common Source Super Junction MOSFET Power Module
File Size	327.89K / 6 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FQP4N80
OCR Text	...g TJ = 25C 3. ISD 3.9A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2000 Fairchild Semiconductor International Rev. A, Septembe...
Description	800v N-Channel MOSFET
File Size	649.38K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQPF3N80C FQP3N80C
OCR Text	...ing TJ = 25C 3. ISD 3A, di/dt 200a/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature (c)2003 Fairchild Semiconductor Corporation Rev. A, April 2003...
Description	800v N-Channel Advance Q-FET C-Series 800v N-Channel MOSFET
File Size	809.01K / 10 Page	View it Online	Download Datasheet

For 200a 800v Found Datasheets File :: 605 Search Time::5.359ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |