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AAT3111 L6228N CMD4D13 AN7810 019071 AT17C010 HFA3128B IRF7700
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  25-ft. Datasheet PDF File

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INFINEON[Infineon Technologies AG]
Part No. BC856S
OCR Text ...ctrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Values Parameter min. AC characteristics Transition frequency IC = ...fT 250 typ. max. Unit MHz pF k 10-4 S dB f = 1 kHz, 3 Nov-29-2001 BC...
Description PNP Silicon AF Transistor Array

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    List of Unclassifed Man...
Part No. M170226G004 M280226G004 M130146G1400 M130126G1008 M130116G1014 M170216G009
OCR Text ...t dimensions height (in./mm) 13.25/337 13.25/337 17.75/450.9 width (in./mm) 14.25/362 14.25/362 14.25/362 depth (in./mm) 7.8/198 7.8/198 7.8/198 weight (lb./kg) 48/22 48/22 58/26 equipment protection solutions sealed e nclo s ure c o...
Description Compact Indoor

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    2SB710 2SB710A 2SB0710 2SB0710A

PANASONIC[Panasonic Semiconductor]
Part No. 2SB710 2SB710A 2SB0710 2SB0710A
OCR Text ...: mm 0.40+0.10 -0.05 3 1.50+0.25 -0.05 2.8+0.2 -0.3 0.16+0.10 -0.06 1 2 (0.65) Absolute Maximum Ratings Ta = 25C Parameter ...fT Cob Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring ...
Description Silicon PNP epitaxial planar type

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    INFINEON[Infineon Technologies AG]
Part No. BC817W BC817-25W BC817-40W BC818W BC817-16W BC818-16W BC818-25W BC818-40W
OCR Text ...500 1 100 200 250 150 BC818W 25 30 5 Unit V Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector c...fT 170 typ. max. Unit MHz pF 3 Nov-29-2001 BC817W, BC818W Total power dissipation ...
Description NPN Silicon AF Transistors NPN AF硅晶体管
General Purpose Transistors - NPN Silicon AF Transistor for general AF applications

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    BFQ135

NXP Semiconductors
Philips Semiconductors
Part No. BFQ135
OCR Text ...IC = 120 mA; VCE = 18 V; Tamb = 25 C IC = 120 mA; VCE = 18 V; f = 1 GHz; Tamb = 25 C open base CONDITIONS MIN. - - - 55 - - - - TYP. - - - -...fT GUM PARAMETER collector cut-off current DC current gain collector capacitance emitter capacitance...
Description NPN 6.5 GHZ WIDEBAND TRANSISTOR

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    BFQ151

NXP Semiconductors
Philips Semiconductors
Part No. BFQ151
OCR Text ... 3.5 1.8 - TYP. MAX. -20 -100 1.25 - - 175 V mA W GHz pF C UNIT LIMITING VALUES In accordance with the Absolute Maximum Rating System (IE...fT PARAMETER collector-base breakdown voltage emitter-base breakdown voltage collector-base leakage ...
Description PNP VIDEO TRANSISTOR

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    2SB766 2SB766A 2SD874A 2SB0766A 2SB0766 2SD874

PANASONIC[Panasonic Semiconductor]
Part No. 2SB766 2SB766A 2SD874A 2SB0766A 2SB0766 2SD874
OCR Text ...O (Ta=25C) Ratings -30 -60 -25 -50 -5 -1.5 -1 1 150 -55 ~ +150 1cm2 Unit V 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 ...fT Cob Conditions VCB = -20V, IE = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -10...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

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    BFQ162

NXP Semiconductors
Philips Semiconductors
Part No. BFQ162
OCR Text ... IC = 300 mA; VCE = 5 V; Tamb = 25 C IC = 300 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 C open emitter RBE = 100 CONDITIONS - - - - 50 1 MIN. -...fT transition frequency IC = 300 mA; VCE = 5 V; f = 100 MHz; Tamb = 25 C; see Fig.6 IC = ic = 0; VCB...
Description NPN VIDEO TRANSISTOR

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    BFQ166

NXP Semiconductors
Philips Semiconductors
Part No. BFQ166
OCR Text ... VCE = 5 V; f = 100 MHz; Tamb = 25 C open emitter RBE = 100 CONDITIONS MIN. - - - - 50 1 TYP. - - - - 60 - PINNING PIN 1 2 3 4 base emitter...fT PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage collector-emitter ...
Description NPN VIDEO TRANSISTOR

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    2SB779

PANASONIC[Panasonic Semiconductor]
Part No. 2SB779
OCR Text ...2.8 -0.3 0.650.15 +0.2 +0.25 1.5 -0.05 0.650.15 2 1.1 -0.1 Parameter Collector to base voltage Collector to emitter voltag...fT Cob *1 Conditions VCB = -25V, IE = 0 VCE = -20V, IB = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 I...
Description Silicon PNP epitaxial planer type(For low-frequency output amplification)

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