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IRF[International Rectifier]
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| Part No. |
HFA08TA60CPBF
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| OCR Text |
...rr * = 40nC 1 3 di(rec)M/dt * = 280a/s * 125C
Benefits
Reduced RFI and EMI Reduced Power Loss in Diode and Switching Transistor Higher Frequency Operation Reduced Snubbing Reduced Parts Count
International Rectifier's HFA08TA60C... |
| Description |
ULTEAFAST, SOFT RECOVERY DIODE
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| File Size |
169.22K /
6 Page |
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IRF[International Rectifier]
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| Part No. |
HFA320NJ40D
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| OCR Text |
...p.) = 45ns di(rec)M/dt (typ.) = 280a/s
Description
HEXFRED diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. An extensive characterization of the recovery behavior for different values of cu... |
| Description |
Ultrafast, Soft Recovery Diode
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| File Size |
221.81K /
5 Page |
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IRF[International Rectifier]
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| Part No. |
IRFIB5N50LPBF
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| OCR Text |
... Figure 12a). ISD 4.0, di/dt 280a/s, VDD V(BR)DSS, TJ 150C.
Notes:
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS. Coss eff.... |
| Description |
SMPS MOSFET
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| File Size |
175.70K /
9 Page |
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IRF[International Rectifier]
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| Part No. |
IRHY57133CMSE JANSR2N7488T3 IRHY57133CMSE-15
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| OCR Text |
...A, VGS = 12V A ISD 18A, di/dt 280a/s, VDD 130V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
12 volt VGS applied and V DS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A ... |
| Description |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-257AA)
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| File Size |
172.08K /
8 Page |
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NIEC[Nihon Inter Electronics Corporation]
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| Part No. |
PHM5601
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| OCR Text |
...S=10V,VGS=0V,f=1MHz VDD= 80V ID=280a VGS= -5V, +10V RG= 1.2 ohm
Min.
1.0 -
Typ.
2.0 1.6 1.0 110 13 13 400 380 170 1,100
Max.
3.2 3.2 3.2 2.0 1.2 -
Unit mA A V m-ohm V S nF nF nF ns
tf
td(off)
FREE WHEELING DIODES RATIN... |
| Description |
MOSFET MODULE Single 560A/150V
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| File Size |
127.57K /
4 Page |
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it Online |
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MICROCHIP[Microchip Technology]
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| Part No. |
TC3403_05 TC3403VPE TC3403VQR TC340305
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| OCR Text |
... Operation, Low Power Operating 280a; Sleep: 93A * Four Single-ended Inputs with Built-in Multiplexer * microPortTM Serial Bus Requires only two Interface Lines * Uses Internal or External Reference * Automatically Enters Sleep Mode when no... |
| Description |
1.8V Low Power, Quad Input, 16-Bit Sigma-Delta A/D Converter with a Power Fault Monitor and Microprocessor Reset Circuit
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| File Size |
214.50K /
16 Page |
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MICROCHIP[Microchip Technology]
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| Part No. |
TC3404_05 TC3404VPE TC3404VQR TC340405
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| OCR Text |
... Operation, Low Power Operating 280a; Sleep: 37A * Two Differential and Two Single-ended Inputs with Built-in Multiplexer * microPortTM Serial Bus Requires only two Interface Lines * Uses Internal or External Reference * Automatically Enter... |
| Description |
1.8V Low Power, Quad Input, 16-Bit Sigma-Delta A/D Converter with a Power Fault Monitor
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| File Size |
207.77K /
16 Page |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM3742-25UL
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| OCR Text |
...IDS= 80mA VDS= 3V VGS= 0V IGS= -280a Channel to Case
UNIT mS V A V C/W
MIN. -1.0 -5
TYP. 5000 -2.5 14.4 1.2
MAX. -4.0 1.5
u The information contained herein is presented only as a guide for the applications of our prod... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
44.60K /
4 Page |
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STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
V300NH02L STV300NH02L
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| OCR Text |
280a - PowerSO-10 STripFETTM Power MOSFET
PRELIMINARY DATA
General features
Type STV300NH02L
VDSS 24V
RDS(on) 0.001
ID 280a
10 1
RDS(on)*Qg industry's benchmark Conduction losses reduced Low profile, very low parasiti... |
| Description |
N-channel 24V - 0.8mOHM - 280a - PowerSO-10 STripFET TM Power MOSFET N沟道24V 0.8mOHM - 280a PowerSO - 10 STripFET商标功率MOSFET
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| File Size |
291.17K /
9 Page |
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it Online |
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IR
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| Part No. |
IRFR024NTR
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| OCR Text |
...ee Figure 12) ISD 10A, di/dt 280a/s, VDD V(BR)DSS, TJ 175C
Pulse width 300s; duty cycle 2%. This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact.
Uses IRFZ24N data and test conditions.
... |
| Description |
55V Single N-Channel HEXFET Power MOSFET in a D-Pak package
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| File Size |
191.44K /
11 Page |
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it Online |
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