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  3-w ch Datasheet PDF File

For 3-w ch Found Datasheets File :: 27655    Search Time::5.828ms    
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    2SJ619

Toshiba Corporation
Toshiba Semiconductor
Sanyo Semicon Device
Part No. 2SJ619
OCR Text ...petitive avalanche energy (Note 3) channel temperature Storage temperature range JEITA TOSHIBA Weight: 0.74 g (typ.) Circuit Config...W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: V...
Description ZD-3.6V- 1 W
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (L2MOSV)
Field Effect Transistor Silicon P channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications

File Size 216.16K  /  6 Page

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    2SJ620

TOSHIBA[Toshiba Semiconductor]
Part No. 2SJ620
OCR Text ...petitive avalanche energy (Note 3) channel temperature Storage temperature range JEDEC JEITA TOSHIBA SC-97 2-9F1B Weight: 0.74 g (...W 1 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: V...
Description Field Effect Transistor Silicon P channel MOS Type (L2-PI-MOSV) Switching Regulator and DC-DC Converter Applications Motor Drive Applications
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (L2-ヰ-MOSV)
TOSHIBA Field Effect Transistor Silicon P channel MOS Type (L2--MOSV)

File Size 221.26K  /  6 Page

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    2SK1083 2SK1083-MR

http://
FUJI[Fuji Electric]
Part No. 2SK1083 2SK1083-MR
OCR Text ...s rss d(on) r d(off) f SD rr 3 - Thermal characteristics Item Thermal Resistance Symbol R R th(ch-a) th(ch-c) Test conditions c...W C/W FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90...
Description N-channel MOS-FET

File Size 182.82K  /  2 Page

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    2SK1085-M

Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
http://
Part No. 2SK1085-M
OCR Text ...R V GS PD T ch T stg Rating 150 3 12 3 20 20 150 -55 ~ +150 Unit V A A A V W C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero ...
Description N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-chANNEL, Si, POWER, MOSFET

File Size 177.09K  /  2 Page

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    2SK1088 2SK1088-M

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FUJI[Fuji Electric]
Part No. 2SK1088 2SK1088-M
OCR Text ... N-channel MOS-FET 150V 0,3 9A 35W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - D...W C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified ...
Description N-channel MOS-FET

File Size 181.89K  /  2 Page

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    2SK1089

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FUJI[Fuji Electric]
Part No. 2SK1089
OCR Text ... RDS(ON) [] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source-On-State-Resistance vs. ID Typical...W] Transient Thermal impedance PD [W] 10 ID [A] 12 11 Tc [C] VDS [V]...
Description N-channel MOS-FET

File Size 198.93K  /  2 Page

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    2SK1098-M

FUJI[Fuji Electric]
Part No. 2SK1098-M
OCR Text ...s rss d(on) r d(off) f SD rr 3 - Thermal characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions c...W C/W FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90...
Description N-channel MOS-FET

File Size 176.27K  /  2 Page

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    2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S

HITACHI[Hitachi Semiconductor]
Part No. 2SK1151 2SK1151L 2SK1151S 2SK1152 2SK1152L 2SK1152S
OCR Text ...-1 4 4 1 1 D G 1. Gate 2. Drain 3. Source 4. Drain S 2 3 23 2SK1151(L)(S), 2SK1152(L)(S) Absolute Maximum Ratings (Ta = 25C) I...W C C 2 2SK1151(L)(S), 2SK1152(L)(S) Electrical characteristics (Ta = 25C) Item Drain to sou...
Description    Silicon N-channel MOS FET
Power switching MOSFET

File Size 47.75K  /  9 Page

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    2SK1153 2SK1154

HITACHI[Hitachi Semiconductor]
Part No. 2SK1153 2SK1154
OCR Text ... TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1153, 2SK1154 Absolute Maximum Ratings (Ta = 25C) Item Dr...W C C 2 2SK1153, 2SK1154 Electrical characteristics (Ta = 25C) Item Drain to source breakdow...
Description Silicon N channel MOS FET
Silicon N-channel MOS FET

File Size 47.74K  /  9 Page

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    2SK1155 2SK1156

HITACHI[Hitachi Semiconductor]
Part No. 2SK1155 2SK1156
OCR Text ... TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1155, 2SK1156 Absolute Maximum Ratings (Ta = 25C) Item Dr...W C C 2 2SK1155, 2SK1156 Electrical characteristics (Ta = 25C) Item Drain to source breakdow...
Description Silicon N channel MOS FET
Silicon N-channel MOS FET

File Size 48.47K  /  9 Page

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