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3.2ma. Datasheet PDF File

For 3.2ma. Found Datasheets File :: 17829 Search Time::2.047ms
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				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS6632A4A ADS6632A4A-5 ADS6632A4A-5.5 ADS6632A4A-6
OCR Text	...Features JEDEC standard LVTTL 3.3V power supply MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,3,8,& full pa...2mA IOL=2mA 3 4 Note Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable. 2.VIL(min)=-1....
Description	Synchronous DRAM(512K X 32 Bit X 4 Banks)
File Size	229.91K / 8 Page	View it Online	Download Datasheet

				ADATA Technology Co., Ltd. A-DATA[A-Data Technology]
Part No.	ADS7608A4A ADS7608A4A-5 ADS7608A4A-55 ADS7608A4A-6 ADS7608A4A-7 ADS7608A4A-75 ADS7608A4A-7.5
OCR Text	...Features JEDEC standard LVTTL 3.3V power supply MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,3,8,& full pa...2mA IOL=2mA 3 4 Note Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable. 2.VIL(min)=-1....
Description	Synchronous DRAM(4M X 8 Bit X 4 Banks) Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM4米8位4银行 Synchronous DRAM(4M X 8 Bit X 4 Banks) 同步DRAM米8位4银行 133 Mhz LVTTL synchronous DRAM, 4 M x 8 bit x 4 banks
File Size	209.31K / 8 Page	View it Online	Download Datasheet

				A-DATA[A-Data Technology] ADATA Technology Co., Ltd.
Part No.	ADS7616A4A ADS7616A4A-55 ADS7616A4A-6 ADS7616A4A-7 ADATATECHNOLOGYCO.LTD.-ADS7616A4A-7
OCR Text	...Features JEDEC standard LVTTL 3.3V power supply MRS Cycle with address key programs -CAS Latency (2 & 3) -Burst Length (1,2,4,8,& full pa...2mA IOL=2mA 3 4 Note Note : 1. VIH (max)=4.6V AC for pulse width 10ns acceptable. 2.VIL(min)=-1....
Description	Synchronous DRAM(2M X 16 Bit X 4 Banks) Synchronous DRAM(2M X 16 Bit X 4 Banks) 同步DRAM米16位4个银行）
File Size	196.04K / 8 Page	View it Online	Download Datasheet

				NTE Electronics, Inc. NTE[NTE Electronics]
Part No.	NTE869
OCR Text	... 1.5 - 40 30 60 -80 1.0 1.0 1.0 3 8 2.5 3.5 10.3 2.0 40 4.7 3.0 18.5 50 - - - 1.1 1.1 1.1 5 15 - - - 50 - - - 22 - dB A/A Mirror Gain (Note 1) Input Bias Current Input Resistance (re) Output Resistance Output Voltage Swing VOUT High VOUT...
Description	Integrated Circuit Dual, High Speed, Programmable Current Mode (Norton) Amp
File Size	24.81K / 3 Page	View it Online	Download Datasheet

				NTE[NTE Electronics]
Part No.	NTE906
OCR Text	...p Cascode Diff. Amp Note 2 Note 3 Collector-Substrate Capacitance (For Each Differential Amplifier) Common-Mode Rejection Ratio AGC Range, O...2mA - - - - 0.25 0.3 13.5 1.1 - - 33 - mV A A V/C V(BR)CEO IC = 1mA, IB = 0 V(BR)CIO IC = 10A, IB...
Description	Integrated Circuit Dual, High Frequency, Differential Amplifier
File Size	29.79K / 3 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S640432F-TL75 K4S640432F K4S640432F-TC1H K4S640432F-TC1L K4S640432F-TC75 K4S640432F-TL1H K4S640432F-TL1L
OCR Text	...RAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with addres...2mA IOL = 2mA 3 Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns. 2. VI...
Description	4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL
File Size	128.47K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4S640432E-TC K4S640432E K4S640432E-L1H K4S640432E-L1L K4S640432E-L75
OCR Text	...RAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with addres...2mA IOL = 2mA 3 Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns. 2. VI...
Description	4M x 4Bit x 4 Banks Synchronous DRAM Data Sheet
File Size	103.86K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S640432D-TC_L80 K4S640432D K4S640432D-TC_L10 K4S640432D-TC_L1H K4S640432D-TC_L1L K4S640432D-TC_L75 K4S640432D-TC/L10 K4S640432D-TC/L1H K4S640432D-TC/L1L K4S640432D-TC/L75 K4S640432D-TC/L80
OCR Text	...RAM FEATURES * JEDEC standard 3.3V power supply * LVTTL compatible with multiplexed address * Four banks operation * MRS cycle with addres...2mA IOL = 2mA 3 Note Notes : 1. VIH (max) = 5.6V AC.The overshoot voltage duration is 3ns. 2. VI...
Description	64Mbit SDRAM 4M x 4Bit x 4 Banks Synchronous DRAM LVTTL 64Mbit SDRAM米4位4银行同步DRAM LVTTL
File Size	127.05K / 10 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S513233F-MC K4S513233F K4S513233F-F1H K4S513233F-F1L K4S513233F-F75 K4S513233F-L
OCR Text	3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CA...2mA IOL = 2mA 3 1. VIH (max) = 3.0V AC.The overshoot voltage duration is 3ns. 2. VIL (min) = ...
Description	Mobile SDRAM 移动SDRAM
File Size	140.34K / 12 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633F-F1L K4S511633F-F75 K4S511633F-L K4S511633F-YC
OCR Text	3.0V & 3.3V power supply. * LVCMOS compatible with multiplexed address. * Four banks operation. * MRS cycle with address key programs. -. CA...2mA IOL = 2mA 3 1. VIH (max) = 5.3V AC.The overshoot voltage duration is 3ns. 2. VIL (min) = ...
Description	8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM
File Size	111.06K / 12 Page	View it Online	Download Datasheet

For 3.2ma. Found Datasheets File :: 17829 Search Time::2.047ms
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