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INFINEON[Infineon Technologies AG]
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| Part No. |
IPB15N03L IPP15N03L 15N03L
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| OCR Text |
...
Values typ. 1.2 max. 1.8 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static C...40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB... |
| Description |
IPP15N03L
OptiMOS Power MOSFET, 30V, TO-220, RDSon = 12.9mOhm, 42A, LL
OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 12.9mOhm, 42A, LL
OptiMOS Buck converter series
OptiMOS Buck converter series
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| File Size |
448.37K /
8 Page |
 View
it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
http://
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| Part No. |
IPD12N03L IPU12N03L
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| OCR Text |
...0
A
24
P tot
ID
20 40 60 80 100 120 140 160 C 190
70 60
20
16 50 40 30 20 4 10 0 0 0 0 20 40 60 80 100 120 140 160 C 190 12
8
TC
TC
4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = tp/T
10 1... |
| Description |
DDM43W2S
OptiMOS Power MOSFET, 30V, TO251, RDSon = 10.4mOhm, 30A, LL
OptiMOS Power MOSFET, 30V, DPAK, RDSon = 10.4mOhm, 30A, LL
OptiMOS Buck converter series
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| File Size |
151.83K /
8 Page |
View
it Online |
Download Datasheet |
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SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
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| Part No. |
BCR112W Q62702-C2284
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| OCR Text |
....3 1.5 2.5 6.2 1.1 k -
VCB = 40 V, IE = 0
Emitter cutoff current
IEBO hFE VCEsat Vi(off)
0.8
VEB = 10 V, IC = 0
DC current gain
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
Input o... |
| Description |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit) 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
NPN Silicon Digital Transistor (Switching circuit/ inverter/ inferface circuit/ driver circuit)
NPN Silicon Digital Transistor (Switching circuit inverter inferface circuit driver circuit)
From old datasheet system
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| File Size |
35.04K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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