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For 400-420 Found Datasheets File :: 16112 Search Time::1.235ms
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				ZETEX[Zetex Semiconductors]
Part No.	ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
OCR Text	... (V) 600 0.6 0.4 0.2 0 400 +25C -55C 200 -55C +25C +100C +150C 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.15 10...
Description	DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR
File Size	178.42K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 22RIA120M 22RIA160M 22RIA80MS90 22RIA80S90 22RIA 22RIA10 22RIA100 22RIA100M 22RIA100MS90 22RIA100S90 22RIA10M 22RIA10MS90 22RIA10S90 22RIA120 22RIA120MS90 22RIA120S90 22RIA140 22RIA140M 22RIA140MS90 22RIA140S90 22RIA160 22RIA160MS90 22RIA160S90 22RIA20 22RIA20M 22RIA20MS90 22RIA20S90 22RIA60 22RIA60M 22RIA60MS90 22RIA60S90 22RIA80 22RIA80M
OCR Text	... A2 s V s C @ 50Hz @ 60Hz 400 420 793 724 100 to 1200 It @ 50Hz @ 60Hz VDRM/VRRM tq TJ typical - 65 to 125 Case Style TO-208AA (TO-48) www.irf.com 1 22RIA Series Bulletin I2403 rev. A 07/00 ELECTRICAL SPECI...
Description	800V 22A Phase Control SCR in a TO-208AA (TO-48) package 1600V 35A Phase Control SCR in a TO-208AA (TO-48) package 1400V 35A Phase Control SCR in a TO-208AA (TO-48) package 1200V 22A Phase Control SCR in a TO-208AA (TO-48) package 1000V 22A Phase Control SCR in a TO-208AA (TO-48) package 100V 22A Phase Control SCR in a TO-208AA (TO-48) package 600V 22A Phase Control SCR in a TO-208AA (TO-48) package MEDIUMPOWERTHYRISTORS 400V 22A Phase Control SCR in a TO-208AA (TO-48) package Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes MEDIUM POWER THYRISTORS 中功率晶闸管
File Size	224.50K / 9 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SC4093 2SC4093-T1 2SC4093-T2 2SC4093R28-T1 2SC4093R27-T1 2SC4093R26-T1 2SC4093RBH-T2 2SC4093R27-T2 2SC4093RBH-T1 2SC4093R26-T2 2SC4093R28-T2 2SC4093RBF-T2 2SC4093RBG-T2 2SC4093RBF-T1 2SC4093NE85639E 2SC4093-T2-R26 2SC4093-T2-R27 2SC4093R-T1
OCR Text	...C = 5 mA, ZO = 50 f (MHz) 200 400 600 800 1000 1200 1400 1600 1800 2000 S11 0.730 0.583 0.522 0.518 0.519 0.539 0.552 0.555 0.570 0.58...420 0.442 0.455 0.468 0.486 0.502 S11 114.9 153.0 172.8 173.4 162.6 154.7 147.7 141.2 133.9 128...
Description	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体管\|晶体管\|叩\| 12V的五（巴西）总裁\| 100mA的一（c）\|的SOT - 143VAR Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:19; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight 微波低噪声放大器NPN硅外延晶体管4个引脚微型模 TRANSISTOR \| BJT \| NPN \| 12V V(BR)CEO \| 100MA I(C) \| SOT-143VAR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits Discrete UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR For amplify high frequency and low noise.
File Size	68.16K / 8 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVFR APT10M11B2VR APT20M22B2VR APT8065
OCR Text	... 4V 4 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TES...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.14K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065BVR APT8065 APT8065AVR
OCR Text	... 4V 4 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TES...
Description	POWER MOS V 800V 13A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.69K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065SVR
OCR Text	... 4V 4 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TES...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 800V 13A 0.650 Ohm
File Size	63.31K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8065 APT8065AVR
OCR Text	... 4V 4 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE O...420) 11.18 (.440) 25.15 (0.990) 26.67 (1.050) 050-5823 Rev A Dimensions in Millimeters and (In...
Description	POWER MOS V 800V 11.5A 0.650 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.68K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT8067HVR
OCR Text	... 4V 4 4V 0 100 200 300 400 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE 30 ID, DRAIN CURRENT (AMPERES) TJ = -55C VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TES...
Description	POWER MOS V 800V 11.5A 0.670 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.92K / 4 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
Part No.	ATF-21186 ATF-21186-STR ATF-21186-TR1
OCR Text	...bsolute Maximum[1] 5 -4 -6 IDSS 400 150 -65 to +150 Notes: 1. Operation of this device above any one of these parameters may cause permanen...420 0.302 0.209 0.138 0.088 0.047 0.025 0.022 0.042 0.088 0.174 0.301 0.471 0.715 Ga dB 15.8 14.2 13...
Description	0.5-6 GHz General Purpose Gallium Arsenide FET
File Size	67.13K / 8 Page	View it Online	Download Datasheet

				http:// List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
Part No.	BC847A-Z1E BC847B-1F BC847C-1GZ BC848B-1K BC850C-Z2G BC849B-2B BC846B-1B BC850B-2FZ BC848C-Z1L BC849C-2C BC848A-1JZ BC849 BC848 BC860 BC859 BC847 BC850 BC856 BC846 BC858 BC857 BC846A-Z1A
OCR Text	...200 290 450 200 270 420 500 800 400 300 2.5 4.5 9 2 10 hFE IC=0.01mA, VCE=5V IC=2mA, VCE=5V IC=100mA, VCE=5V IC=0.01mA, VCE=5V IC=2mA, VCE=5V 270 420 500 800 270 420 500 800 IC=100mA, VCE=5V IC=...
Description	Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes 采用SOT23 NPN硅平面通用晶体 SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS 采用SOT23 NPN硅平面通用晶体
File Size	34.65K / 3 Page	View it Online	Download Datasheet

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