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MORE Semiconductor Comp...
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| Part No. |
MSC0211GE
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| OCR Text |
....2 v v gs =4.5v, i d =10a - 5.5 7 m ? drain-source on-state resistance r ds(on) v gs =2.5v, i d =5.5a - 7 9 m ? forward tra...turn-on delay time t d(on) - 2.5 ns turn-on rise time t r - 7.2 ns turn-off de... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
366.09K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0207W
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| OCR Text |
...-source voltage (v) figure 5 output characteristics v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10%... |
| Description |
-20V(D-S) Dual P-Channel Enhancement Mode Power MOS FET
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| File Size |
462.73K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0207SE
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| OCR Text |
...ce r ds(on) v gs =2.5v, i d =5.5a - 20 27 m ? forward transconductance g fs v ds =5v,i d =7a - 20 - s dynamic characteristi...turn-on delay time t d(on) - 6 ns turn-on rise time t r - 13 ns turn-off delay... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
411.41K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0207GE
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| OCR Text |
...mum power dissipation p d 1.5 w operating junction and st orage temperature range t j ,t stg -55 to 150 thermal characterist...turn-on delay time t d(on) - 6 ns turn-on rise time t r - 13 ns turn-off delay... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
359.32K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0206W
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| OCR Text |
...h) v ds =v gs ,i d =250 a 0.5 1.2 v v gs =4.5v, i d =6a - 21 28 drain-source on-state resistance r ds(on) v gs =2.5v, i d =5...turn-on delay time t d(on) - 8 - ns turn-on rise time t r - 9 - ns turn-off dela... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
466.22K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0206SE
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| OCR Text |
...on delay time t d(on) - 0.5 ns turn-on rise time t r - 1 ns turn-off delay time t d(off) - 12 ns turn-off fall time t f v dd =10v,r l =1. 5 ? v gs =5v,r gen =3 ? - 4 ns total gate charge q g ... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
350.46K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0205W
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| OCR Text |
...h) v ds =v gs ,i d =250 a 0.5 1.2 v v gs =4.5v, i d =6a - 21 28 drain-source on-state resistance r ds(on) v gs =2.5v, i d =5...turn-on delay time t d(on) - 8 - ns turn-on rise time t r - 9 - ns turn-off dela... |
| Description |
20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET
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| File Size |
463.95K /
6 Page |
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MORE Semiconductor Comp...
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| Part No. |
MSC0203S MSC0203S-SOT23
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| OCR Text |
...h) v ds =v gs ,i d =250 a 0.5 0.75 1.2 v v gs =2.5v, i d =2.8a - 35 90 m ? drain-source on-state resistance r ds(on) v gs =...turn-on delay time t d(on) - 2.5 - ns turn-on rise time t r - 3.2 - ns turn-off ... |
| Description |
N and P-Channel Enhancement Mode Power MOS FET
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| File Size |
473.08K /
10 Page |
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SHANTOU HUASHAN ELECTRO...
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| Part No. |
HGH25N120A
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| OCR Text |
5 n120 a applications ? induction heating and microwave oven ? soft switching applications features ? low saturation voltage, v...turn-on delay time 40 ns t r rise time 70 ns t d(off) turn-off delay time 80 ... |
| Description |
N-Channel Enhancement Insulated Gate Bipolar Transistor
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| File Size |
988.06K /
6 Page |
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Foshan Blue Rocket Elec...
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| Part No. |
BRG25N120D
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| OCR Text |
...(th) i c =15ma v ce =v ge 3.5 - 7.5 v collector-emitter saturation voltage v ce(sat) i c =25a v ge =15v - 2.1 2.5 v input capacit...turn-on delay time t d(on) v ce =600v i c =25a r g =10 ? v ge =15v inductive load - 42 - n... |
| Description |
Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package
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| File Size |
756.30K /
6 Page |
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