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SEME-LAB[Seme LAB]
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Part No. |
HCT700
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OCR Text |
... IE = 0 IC = 0 Tamb = 25C VCE = 50v VCE = 10V VCE = 10V VCE = 10V hFE DC Current Gain VCE = 10V VCE = 10V VCE = 10V Tamb = -55C VCE(SAT VBE(...500ma IC = 150mA IC = 500ma VCE = 10V f = 1kHz VCE = 20V f = 100MHz VEB = 2V IC = 20mA IC = 50mA 8.0... |
Description |
From old datasheet system COMPLEMENTARY SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS
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File Size |
18.81K /
2 Page |
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it Online |
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Mitsubishi Electric Corporation
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Part No. |
M54563FP M54563P/FP
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OCR Text |
... breakdown voltage (bv ceo 3 50v) high-current driving (io(max) = C500ma) with clamping diodes driving available with pmos ic output o...500ma source type darlington transistor array with clamp diode m a ma v m a i s (leak) # i... |
Description |
8-UNIT 500ma SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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File Size |
104.05K /
4 Page |
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it Online |
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EUDYNA[Eudyna Devices Inc]
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Part No. |
ESN26A090IV
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OCR Text |
50v High Power : 50.0dBm (typ.) @ P3dB High Efficiency: 55%(typ.) @ P3dB Linear Gain : 14.0dB(typ.) @ f=2.6GHz Proven Reliability
ES/EGN2...500ma f=2.6GHz Channel to Case TBD -1.0 TBD
Limit Typ. Max.
-2.0 -350 50.0 55 14.0 1.3 -3.5 1.5 ... |
Description |
High Voltage - High Power GaN-HEMT
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File Size |
102.49K /
4 Page |
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it Online |
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SEMTECH[Semtech Corporation]
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Part No. |
SC5826 SC5826-2CS SC5826-1CS
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OCR Text |
...N).
Conditions 4.25V VIN 5.50v VO = 5.5V, Switches OFF CO = 1F, RO = 10 CO = 1F, RO = 10 4.25V VIN 5.50v 4.25V VIN 5.50v EN = VIN, ...500ma in accordance with USB specifications. Charge Pump An internal charge pump powers the MOSFET g... |
Description |
HotSwitch??USB Power Distribution Switch HotSwitch USB Power Distribution Switch HotSwitch⑩ USB Power Distribution Switch HotSwitchUSB Power Distribution Switch
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File Size |
150.85K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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