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				Toshiba Semiconductor
Part No.	TpCp8103-h
OCR Text	... ? small gate charge: q sw = 6.5 nc (typ.) ? low drain-source on-resistance: r ds (on) = 31 m ? (typ.) ? high forward transfer admi...k ) v dgr -40 v gate-source voltage v gss 20 v dc (note 1) i d -4.8 drain current pulsed...
Description	Field Effect Transistor silicon MOs Type
File Size	228.84K / 4 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpC8049-h
OCR Text	...ce on-resistance: r ds (on) = 6.9 m (typ.) ? high forward transfer admittance: \|y fs \| = 48 s (typ.) ? low leakage current: i dss...k ) v dgr 60 v gate-source voltage v gss 20 v dc (note 1) i d 13 drain current pulsed (n...
Description	switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
File Size	203.41K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpC8052-h
OCR Text	... ? small gate charge: q sw = 6.6 nc (typ.) ? low drain-source on-resistance: r ds (on) = 7.4 m (typ.) ? high forward transfer adm...k ) v dgr 40 v gate-source voltage v gss 20 v dc (note 1) i d 12 drain current pulsed (n...
Description	power MOsFET (N-ch single 30V<VDss≤60V)
File Size	208.21K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpC8406-h
OCR Text	...p-Channel N-Channel -40 -40 20 -6.5 -26 1.5 1.1 0.75 0.45 19 (Note 4a) -6.5 0.08 150 -55 to 150 40 40 20 6.5 26 1.5 1.1 W 0.75 0.45 19 (Note 4b) 6.5 mJ A mJ C C Unit V V V A JEDEC JEITA TOshIBA 2-6J1E Weight: 0.085 g (typ.) Dr...
Description	Field Effect Transistor silicon p/N-Channel MOs Type (p-Channel／N-Channel Ultra-high-speed U-MOsIII) Field Effect Transistor silicon p/N-Channel MOs Type (p-Channel拢炉N-Channel Ultra-high-speed U-MOsIII)
File Size	283.71K / 11 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	2sC2618RCTL-h
OCR Text	...ion voltage v ce(sat) ? 0.2 0.6 v i c = 150 ma, i b = 15 ma (pulse test) base to emitter voltage v be ? 0.64 ? v v ce = 3 v, i c ...k tel: +44-1628-585-100, fax: +44-1628-585-900 renesas electronics europe gmbh arcadiastrasse 10, 40...
Description	silicon NpN Epitaxial
File Size	80.02K / 6 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpC8010-h
OCR Text	... circuit configuration 8 6 1 2 3 7 5 4 tpc8010-h 2002-03-12 2 thermal characteristics characteristics symbol max unit thermal resistance, channel to ambient (t 10 s) (note 2a) r th (ch-a) 65.8 c/w thermal resist...
Description	Field Effect Transistor silicon N Channel MOs Type (high speed U-MOsIII) DC-DC Converters Notebook pC Applications portable Equipment Applications
File Size	176.57K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpCA8060-h
OCR Text	...(t = 10 s) (note 2b) p d 1.6 w single-pulse avalanche energy (note 3) e as 263 mj avalanche current i ar 45 a repetitive avalanche energy (tc = 25 ) (note 4) e ar 3.53 mj channel temperature t ch 150 c storage temperatu...
Description	Field Effect Transistor
File Size	206.15K / 7 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TpC8050-h
OCR Text	...p.) circuit configuration 8 6 1 2 3 7 5 4 tpc8050-h 2009-06-30 2 thermal characteristics characteristic symbol max unit thermal resistance, channel to ambient (t = 10 s) (note 2a) r th (ch-a) 65.8 c/w thermal resistan...
Description	switching Regulator Applications Motor Drive Applications DC-DC Converter Applications
File Size	201.80K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TpC8015-h
OCR Text	...ansfer admittance: \|y fs \| = 1 6 s (typ.) ? low leakage current: i dss = 1 0 a (max) (v ds = 30 v) ? enhancement mode: v th = 1 . ...k ? ) v dgr 30 v gate-source voltage v gss 20 v dc (note 1) i d 13 drain current pulsed ...
Description	MOsFET TpC series TRANsIsTOR \| MOsFET \| N-ChANNEL \| 30V V(BR)Dss \| 13A I(D) \| sO
File Size	373.23K / 7 Page	View it Online	Download Datasheet

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