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TRIQUINT[TriQuint Semiconductor]
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Part No. |
TGF2022-60
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OCR Text |
60
Key Features and Performance
Frequency Range: DC - 20 GHz > 38 dBm Nominal Psat 57% Maximum PAE 12 dB Nominal Power Gain Suitable for high reliability applications 6.0mm x 0.35um Power pHEMT Nominal Bias Vd = 8-12V, Idq = 448-752mA (... |
Description |
DC - 20 GHz Discrete power pHEMT
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File Size |
141.48K /
8 Page |
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SAMHOP[SamHop Microelectronics Corp.]
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Part No. |
STD3055L2-60 STU3055L2-60
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OCR Text |
60
SamHop Microelectronics Corp. Nov 26 , 2004 Ver1.2
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
20V
FEATURES
( m [ ) Max
ID
14A
RDS(ON)
Super high dense cell design for low RDS(ON).
65 @... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
765.71K /
8 Page |
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it Online |
Download Datasheet
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FORMOSA[Formosa MS]
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Part No. |
SGL34-60 SGL34-20 SGL34-30 SGL34-40 SGL34-50
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OCR Text |
60
Silicon epitaxial planer type
Formosa MS
DO-213AA (GL34)
Features
Plastic package has Underwriters Laboratory Flammability Classification 94V-O Utilizing Flame Retardant Epoxy M olding Compound. For surface mounted applications.... |
Description |
Silicon epitaxial planer type
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File Size |
62.42K /
2 Page |
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it Online |
Download Datasheet
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Price and Availability
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