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SeCoS Halbleitertechnol...
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| Part No. |
SIK04N60SL-15
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| OCR Text |
600v , r ds(on) 2.4 n-ch enhancement mode power mosfet 17-jul-2014 rev. a page 1 of 5 http://www.secosgmbh.com/ any changes...0.76 w single pulse avalanche energy 1 e as 217 mj operating junction and storage temperatu... |
| Description |
N-Ch Enhancement Mode Power MOSFET
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| File Size |
553.92K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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| Part No. |
AOT11S60
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| OCR Text |
600v 11a a aa a mos tm power transistor v ds @ t j,max 700v i dm 45a r ds(on),max 0.399 w q g,typ 11nc e oss @ 400v 2.7 m j symbol v ds v gs i dm i ar e ar e as mosfet dv/dt ruggedness peak diode recovery dv/dt h t j ... |
| Description |
600v 11A a MOS TM Power Transistor
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| File Size |
615.79K /
6 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRAMS06UP6 IRAMS06UP60A IRADK10
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| OCR Text |
...st reduction advantages.
6A, 600v
Features
* * * * * * * * * * * * Integrated Gate Drivers and Bootstrap Diodes Temperature Monitor O...0.1~0.5kW / 85~253 Vac Isolation 2000VRMS /1min
Absolute Maximum Ratings
Parameter VCES V+ Io @ ... |
| Description |
3-Phase 115-230V motor drive for 0.5 HP AC induction motor
Plug N DriveTM Integrated Power Module for Appliance Motor Drive
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| File Size |
444.44K /
18 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
IRG4BC30UD IRG4BC30UDPBF
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| OCR Text |
...UltraFast CoPack IGBT
VCES = 600v
G E
VCE(on) typ. = 1.95V
@VGE = 15V, IC = 12A
n-cha nn el
Benefits
* Generation -4 IGBT's o...0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m)
Units
V
A
V W
C
Thermal Resistance
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| Description |
600v UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600v, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
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| File Size |
231.51K /
10 Page |
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it Online |
Download Datasheet |
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Price and Availability
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