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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...s while VDS is rising from 0 to 80% VDSS . VCalculated continuous current based on maximum allowable junction temperature. Package limitatio...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG V DD ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...A 0.0 -60 -40 -20 0 20 40 60 80 VG S = -10 V 100 120 140 160 180 A -VG S , Ga te-to-S o urce V oltage (V ) T J , Junction ...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case - RG VDD ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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    IRF5305L IRF5305S

IRF[International Rectifier]
Part No. IRF5305L IRF5305S
OCR Text ...A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -1 0V 100 120 140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , J unc ti...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - ...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.06ohm/ Id=-31A)
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 167.31K  /  10 Page

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    IRF5305

IRF[International Rectifier]
Part No. IRF5305
OCR Text ...A 0.0 -60 -40 -20 0 20 40 60 80 V G S = -10 V 100 120 140 160 180 A -V G S , G ate -to-Source Volta ge (V ) T J , Junction...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com - ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)

File Size 120.44K  /  8 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ... 100 0.11 -790 175 72 40 40 110 80 36 --nC ns pF A V Test Condition VGS=0V,ID=250 A See Fig 7 VDS=5V,ID=250 A V/ C ID=250 A V nA V...sec] N-CHANNEL POWER MOSFET Fig 12. Gate Charge Test Circuit & Waveform IRF530A " Current ...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ...A 0.0 -60 -40 -20 0 20 40 60 80 V G S = 10 V 100 120 140 160 180 A V G S , G ate-to -So urce Voltag e (V) T J , Junction T...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IR...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7807D1

International Rectifier
Part No. IRF7807D1
OCR Text ...0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J , Junction Temperature ( C ) VG...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET(R) MOSFET...
Description MOSFET / SCHOTTKY DIODE

File Size 162.75K  /  8 Page

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    IRF7807D2

International Rectifier
Part No. IRF7807D2
OCR Text ...0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 10 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J, Junction Temperature (C ) VGS...sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.i...
Description MOSFET / SCHOTTKY DIODE

File Size 131.40K  /  8 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ... -20 VGS = 4.5V 0 20 40 60 80 100 120 140 160 0.010 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 TJ , Junction Temperature ( C) VGS, Ga...sec) Figure 9. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 ID = 7....
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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