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Alliance Semiconductor, Corp.
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| Part No. |
AS7C33256PFD18A-183TQI AS7C33256PFD18A-183TQC
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| OCR Text |
...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and the chip is in read mode. lbo ...page 2 for more information. 2 q in flow-through mode 3 for write operation following a read, oe m... |
| Description |
256K X 18 STANDARD SRAM, 9 ns, PQFP100 14 X 20 MM, TQFP-100
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| File Size |
276.67K /
11 Page |
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it Online |
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Alliance Semiconductor, Corp.
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| Part No. |
AS7C33512PFS16A
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| OCR Text |
...r for pipelined operation. zz i async sleep. places device in low power mode; data is retained. connect to gnd if unused. parameter symbol ...page 2 for more information. 2 q in flow through mode 3 for write operation following a read, oe m... |
| Description |
3.3V 512K x 16/18 pipeline burst synchronous SRAM
3.3V 512K×16 Pipeline burst Synchronous SRAM(3.3V 512K×16流水线脉冲同步静态RAM) 3.312k × 16管道爆裂同步SRAM的电压（3.3V12k × 16流水线脉冲同步静态内存）
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| File Size |
211.29K /
11 Page |
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it Online |
Download Datasheet |
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Alliance Semiconductor, Corp.
ALLIANCE SEMICONDUCTOR CORP
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| Part No. |
AS7C33128PFS16A-133TQC AS7C33128PFS16A-133TQI AS7C33128PFS16A-100TQI
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| OCR Text |
...the cycle is a read cycle. oe i async asynchronous output enable. i/o pins are driven when oe is active and the chip is in read mode. lbo ...page 2 for more information. 2 q in flow-through mode 3 for write operation following a read, oe m... |
| Description |
128K X 16 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 16 STANDARD SRAM, 12 ns, PQFP100
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| File Size |
245.70K /
11 Page |
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it Online |
Download Datasheet |
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Alliance Semiconductor, Corp.
Twilight Technology, Inc.
Qimonda AG
Macronix International Co., Ltd.
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| Part No. |
MT45W8MW16BGX-708IT MT45W8MW16BGX-7013LWT MT45W8MW16BGX-701IT MT45W8MW16BGX-706LWT MT45W8MW16BGX-7013IT MT45W8MW16BGX-708WTTR MT45W8MW16BGX-708LWT
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| OCR Text |
async/page/ burst cellularram 1.5 async/ page/burst cellularram 1.5 memory pdf: 09005aef80ec6f79/source: 09005aef80ec6f65 micron technology, inc., reserves the right to change products or specifications without notice. 128mb_burst_cr1_5_p26... |
| Description |
8M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 8 X 10 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, VFBGA-54
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| File Size |
1,935.22K /
68 Page |
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it Online |
Download Datasheet |
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Alliance Semiconductor, Corp.
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| Part No. |
AS7C33128PFD32A-183TQI AS7C33128PFD36A-183TQI
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| OCR Text |
... for pipelined operation. zz i async sleep. places device in low power mode; data is retained. connect to gnd if unused. absolute maximum ...page 2 for more information. 2 q in flow through mode. 3 for write operation following a read, oe ... |
| Description |
128K X 32 STANDARD SRAM, 9 ns, PQFP100 14 X 20 MM, TQFP-100
128K X 36 STANDARD SRAM, 9 ns, PQFP100 14 X 20 MM, TQFP-100
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| File Size |
319.31K /
11 Page |
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it Online |
Download Datasheet |
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SMSC, Corp.
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| Part No. |
MT45W1MW16BDGB-708ITES
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| OCR Text |
async/page/burst cellularram 1.0 memory features pdf: 09005aef81cb58ed/source: 09005aef81c7a667 micron technology, inc., reserves the right to change products or specifications without notice. 16mb_burst_cr1_0_p23z_1.fm - rev. f 12/ 06 en 1... |
| Description |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 6 X 8 MM, 1 MM HEIGHT, 0.75 MM PITCH, GREEN, VFBGA-54
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| File Size |
1,636.37K /
58 Page |
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it Online |
Download Datasheet |
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SMSC, Corp.
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| Part No. |
MT45W512KW16BEGB-708IT
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| OCR Text |
async/page/burst cellularram 1.0 memory features pdf: 09005aef82e41987 / source: 09005aef82e419a5 micron technology, inc., reserves the right to change products or specifications without notice. 8mb_4mb_burst_cr1_0_p22z__1.fm - rev. c 4/ 08... |
| Description |
512K X 16 PSEUDO STATIC RAM, 70 ns, PBGA54 6 X 8 MM, 1 MM HEIGHT 0.75 MM PITCH, GREEN, VFBGA-54
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| File Size |
1,658.86K /
58 Page |
View
it Online |
Download Datasheet |
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