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				Freescale Semiconductor, Inc
Part No.	MRF18085BLR3 MRF18085B MRF18085BLSR3
OCR Text	...5 3 2.5 2 1.5 1 0.5 0 1.91 19 W avg. 28 W avg. VDD = 26 Vdc IDQ = 800 mA Pout = 38 W avg. G ps, POWER GAIN (dB) 400 mA 11 VDD = 26 Vdc f = 1960 MHz 10 1 10 Pout, OUTPUT POWER (WATTS) 100 1.92 1.93 1.94 1.95 1.96 1.97 f, FR...
Description	RF Power Field Effect Transistors
File Size	438.49K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF21180 MRF21180R6 MRF21180R606
OCR Text	... f2 + 10 MHz, Each Carrier Peak/avg. = 8.3 dB @ 0.01% Probability on CCDF. Output Power -- 38 Watts (avg.) Power Gain -- 12.1 dB Efficiency -- 22% IM3 -- 37.5 dBc ACPR -- - 41 dBc * Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 170 Watt...
Description	RF Power Field Effect Transistor
File Size	326.84K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MRF5S21150S MRF5S21150SR3 MRF5S21150 MRF5S21150R3
OCR Text	...1 - 10 MHz and f2 +10 MHz, Peak/avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power -- 33 Watts avg. Power Gain -- 12.5 dB Efficiency -- 25% IM3 -- - 37 dBc ACPR -- - 39 dBc * Internally Matched, Controlled Q, for Ease of Use * High Gai...
Description	RF POWER FIELD EFFECT TRANSISTORS
File Size	553.35K / 12 Page	View it Online	Download Datasheet

				Analog Devices, Inc. AD [Analog Devices] AD[Analog Devices]
Part No.	SSM2165 SSM2165-1 SSM2165-1P SSM2165-1S SSM2165-2P SSM2165-2S
OCR Text	...1 F RA 2 VOUT SSM2165 avg CAP C3 22 F + R1 25k COMPRESSION RATIO SET GND The SSM2165 is a complete and flexible solution for conditioning microphone inputs in computer audio systems. It is also excellent for improving vocal ...
Description	Microphone Preamplifier with Variable Compression and Noise Gating 1 CHANNEL, AUDIO PREAMPLIFIER, PDSO8
File Size	162.88K / 10 Page	View it Online	Download Datasheet

				ANALOG DEVICES INC AD[Analog Devices]
Part No.	SSM2166 SSM2166P SSM2166S
OCR Text	... SSM2166 12 POWER DOWN 1 GND 8 avg CAP 22 F + 10 25k COMPRESSION RATIO SET OPTIONAL Patents pending. Figure 2. Functional Block Diagram and Typical Speech Application REV. A Information furnished by Analog Devices is believe...
Description	Microphone Preamplifier with Variable Compression and Noise Gating
File Size	214.67K / 15 Page	View it Online	Download Datasheet

				Powerex Power Semiconductors Powerex Power Semicondu...
Part No.	QRP1240R30 QRC1240R30 QRM1240R30 QRJ1240R30
OCR Text	...) average on-state current, i f(avg) , (amperes) 0 50 100 150 200 250 300 conduction angle 0 360 180 180 120 90 60 30 15 maximum allowable case temperature (sinusoidal waveform) 150 140 120 130 110 70 60 90 100 80 50 maximum case temperatu...
Description	Super Fast Recovery Diode Modules 280 Amperes/1200 Volts Super Fast Recovery Diode Modules 280 Amperes/1200 Volts
File Size	373.50K / 3 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5P21180HR6
OCR Text	... IDQ = 1600 mA, Pout = 38 Watts avg., Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 14 dB Drain Efficiency -- 25.5% IM3 @ 10 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset ...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	379.32K / 12 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF5S9070NR1
OCR Text	..., IDQ = 600 mA, Pout = 14 Watts avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain -- 17.8 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 47 dBc in 30 kHz Bandwidth * Capable of Handling 10:1 VSWR, @ 26 V...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	542.25K / 16 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRF6P21190HR606 MRF6P21190HR6
OCR Text	... IDQ = 1900 mA, Pout = 44 Watts avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain -- 15.5 dB Drain Efficiency -- 26.5% IM3 @ 10 MHz Offset -- - 37 dBc in 3.84 MHz Channel Bandwidth...
Description	RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET
File Size	430.10K / 12 Page	View it Online	Download Datasheet

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