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BSI[Brilliance Semiconductor]
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| Part No. |
BS616LV8021AI BS616LV8021 BS616LV8021AC
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| OCR Text |
... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1uA and maximum access time of 70/100ns in 3.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), ... |
| Description |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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| File Size |
203.09K /
11 Page |
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it Online |
Download Datasheet
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BSI[Brilliance Semiconductor]
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| Part No. |
BS616LV8022BI BS616LV8022 BS616LV8022BC
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| OCR Text |
... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70/100ns in 3.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2)... |
| Description |
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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| File Size |
208.00K /
11 Page |
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it Online |
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| Part No. |
IBM39ENV420 IBM39ENV422
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| OCR Text |
...ppli- cation. the chip supports both mpeg-1 and mpeg- 2 real-time encoding. it handles multiple profiles and levels including 4:2:2 profile at main level and can encode picture resolutions up to 720x512 and 720x608 in ntsc and pal, respecti... |
| Description |
SPECIALTY CONSUMER CIRCUIT, PBGA420
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| File Size |
20.44K /
6 Page |
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it Online |
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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616LV8025BI BS616LV8025 BS616LV8025BC
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| OCR Text |
... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 3uA and maximum access time of 55/70ns in 5.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), a... |
| Description |
LM5022 60V Low Side Controller for Boost and SEPIC; Package: MINI SOIC; No of Pins: 10
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
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| File Size |
204.91K /
11 Page |
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it Online |
Download Datasheet |
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BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV1620FI BS616UV1620 BS616UV1620BC BS616UV1620BI BS616UV1620FC
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| OCR Text |
... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.2uA and maximum access time of 70/100ns in 2.0V operation. This device provide three control inputs and three states output driv... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
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| File Size |
212.63K /
12 Page |
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it Online |
Download Datasheet |
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BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8020BI BS616UV8020 BS616UV8020BC
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| OCR Text |
... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.4uA and maximum access time of 70/100ns in 2V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2), ... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
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| File Size |
204.80K /
11 Page |
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it Online |
Download Datasheet |
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BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
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| Part No. |
BS616UV8021FI BS616UV8021 BS616UV8021BC BS616UV8021BI BS616UV8021DC BS616UV8021DI BS616UV8021FC
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| OCR Text |
... and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.6uA and maximum access time of 70/100ns in 2.0V operation. Easy memory expansion is provided by an active HIGH chip enable2(CE2)... |
| Description |
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 1600万8位开
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable 超低功率/电压CMOS SRAM的为512k × 16100万8位开
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| File Size |
212.98K /
12 Page |
View
it Online |
Download Datasheet |
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