|
|
|
LRC[Leshan Radio Company]
|
Part No. |
L2SC4226QT1
|
OCR Text |
...ent Gain Gain Bandwidth Product Feed back Capacitance Insertion Power Gain Noise Figure
SYMBOL ICBO IEBO hFE fT Cre |S21e|2 NF
MIN.
TYP.
MAX. 1.0 1.0
UNIT
TEST CONDITION VCB = 10 V, IE = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC =... |
Description |
High-Frequency Amplifier Transistor
|
File Size |
137.18K /
5 Page |
View
it Online |
Download Datasheet |
|
|
|
NEC Corp. NEC, Corp.
|
Part No. |
2SC3583 2SC3583R 2SC3583S 2SC3583R35 2SC3583R34 2SC3583-L
|
OCR Text |
...ent Gain Gain Bandwidth Product feed-back Capacitance Insertion Power Gain Maximum Available Gain Noise Figure SYMBOL ICBO IEBO hFE * fT Cre ** 50 100 9 0.35 11 13 15 1.2 2.5 0.9 MIN. TYP. MAX. 1.0 1.0 250 GHz pF dB dB dB UNIT TEST CONDITIO... |
Description |
For amplify microwave and low noise. MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits 晶体 BJT 双极型晶体管
|
File Size |
101.97K /
8 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|