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				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. ...1 4 0.2 RDS(on)2 = 56 m MAX. (VGS = -4 V, ID = -15 A) * Low Ciss Ciss = 4120 pF TYP. * Built-in ...
Description	From old datasheet system MOS Field Effect Power Transistors SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				Unisonic Technologies
Part No.	UB240 UB240G-XX-S08-T UB240L-XX-P08-R UB240-15 UB240L-XX-S08-T UB240G-XX-S08-R
OCR Text	...ositive power input pin 8 out fet gate connection pin for charge ? serial code list code overcharge detection voltage [v cu ](v) ov...1. absolute maximum ratings are those values beyond which the device could be permanently damaged....
Description	LION BATTERY PROTECTION IC FOR 1-SERIAL TO 4-SERIAL-CELL PACK
File Size	207.26K / 11 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWF1686NC
OCR Text	FET Non-Via Hole Chip Autumn 2002 V1 Features Output Power: P1dB=30dBm(typ.) High Gain: GL=15dB(typ.) High Efficiency: PAE =45%(typ.) H...1 to 2: Gate 3 to 4: Drain 0 .0 0 .0 5 8 .5 3 4 4 .5 400 * mounted on an infinite heat sink E...
Description	L-Band Power FET Non-Via Hole Chip
File Size	104.30K / 3 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWF1681RA
OCR Text	... mA dB % V L-Band GaAs Power FET Min. 33.5 -3.5 900 14 - - - HWF1681RA June 2005 1200 Typ. 34.5 -2.0 600 15 48 43 9 Max. 1600 -1.5 V3 12 - - - - ] 1[ HCT...
Description	L-Band GaAs Power FET
File Size	141.60K / 3 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWC34NC HWC34NC-V1-15
OCR Text	FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET 1525.0 Outline Dimensions 1392.5 Class A or Cl...1 10 5 Description 920.0 2 6 The HWC34NC is a power GaAs FET designed for various L-...
Description	C-Band Power Non-Via Hole Chip C-Band Power FET Non-Via Hole Chip
File Size	73.76K / 2 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWC30NC
OCR Text	FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET Class A or Class AB Operation 11 dB Typical Gain at 4 ...1 4 Description 430 2 5 The HWC30NC is a medium power GaAs FET designed for various L-ban...
Description	C-Band Power FET Non-Via Hole Chip
File Size	79.10K / 2 Page	View it Online	Download Datasheet

				Hexawave, Inc
Part No.	HWC27NC
OCR Text	FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET Class A or Class AB Operation 11 dB Typical Gain at 4 ...1 3 215 2 4 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * Drain to Source...
Description	C-Band Power FET Non-Via Hole Chip
File Size	79.88K / 2 Page	View it Online	Download Datasheet

				Hittite Microwave Corporation
Part No.	HMC216MS806 216MS8E
OCR Text	FET MIXER, 1.3 - 2.5 GHz Typical Applications The HMC216MS8 / HMC216MS8E is ideal for: * Base Stations Features IP3 (Input): +25 dBm @ +11 dBm LO LO Range = +3 to +11 dBm Conversion Loss: 8.5 dB LO / RF Isolation: 32 dB 7 MIXERS...
Description	GaAs MMIC SMT DOUBLE-BALANCED FET MIXER, 1.3 - 2.5 GHz
File Size	232.06K / 6 Page	View it Online	Download Datasheet

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