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CET[Chino-Excel Technology]
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Part No. |
CED51A3 CEU51A3
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OCR Text |
...wise noted Symbol Limit VDS VGS ID IDM PD TJ,Tstg 30
Units V V A A W W/ C C
20
35 140 50 0.33 -55 to 175
Maximum Power Dissipation...35A VDS = 24V, ID = 35A, VGS = 5V VDD =15V , ID = 17.5A, VGS = 4.5V, RGEN = 4.7 20 7 30 8 14 3.7 5 3... |
Description |
N-Channel Enhancement Mode Field Effect Transistor
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File Size |
137.15K /
4 Page |
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STMICROELECTRONICS[STMicroelectronics]
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Part No. |
STB70NF3LL_06 STB70NF3LL STB70NF3LLT4 STB70NF3LL06
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OCR Text |
...VDSS 30V
RDS(on) < 0.0095
ID 70A
Optimal RDS(on) x Qg trade-off @ 4.5V Conduction losses reduced Switching losses reduced
3 1
D...35A, VDD = 25V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Parameter Thermal resistance junc... |
Description |
N-channel 30V - 0.0075ohm - 70A - D2PAK Low gate charge STripFET TM II Power MOSFET
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File Size |
437.57K /
13 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
RLP1N06CLE
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OCR Text |
.... . . . . . . . . . . . . . . . ID Gate to Source Voltage (Reverse Voltage Gate Bias Not Allowed) . . . . . . . . . . . . . . . . . . . .VGS...35A RJC = 4.17oC/W
80 DUTY CYCLE = 20% 60 10% 5% 2%
FREE AIR RJA = 80oC/W
40 50% 20 MAX PUL... |
Description |
1A/ 55V/ 0.750 Ohm/Voltage Clamping/ Current Limited/ N-Channel Power MOSFET 1A, 55V, 0.750 Ohm,Voltage Clamping, Current Limited, N-Channel Power MOSFET 1A, 55V, 0.750 Ohm,Voltage Clamping,Current Limited, N-Channel Power MOSFET(1A, 55V, 0.750 Ω,电压箝位,电流限定,N沟道功率MOS场效应管)
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File Size |
47.02K /
7 Page |
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INTERSIL[Intersil Corporation]
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Part No. |
HUF76129S3S HUF76129P3 FN4395
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OCR Text |
.... . . . . . . . . . . . . . . . ID Continuous (TC = 100oC, VGS = 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....35A, VGS = 5V (Figure 9) ID = 34A, VGS = 4.5V
1 -
0.014 0.0175 0.0195
3 0.016 0.021 0.023
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Description |
56A/ 30V/ 0.016 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFETs 56A, 30V, 0.016 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs From old datasheet system
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File Size |
108.32K /
10 Page |
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IRF[International Rectifier]
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Part No. |
IRHMJ58160 IRHMJ53160 IRHMJ54160 IRHMJ57160
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OCR Text |
...RDS(on) 0.018 0.018 0.018 0.019 ID 35A* 35A* 35A* 35A*
IRHMJ57160 100V, N-CHANNEL
5
TECHNOLOGY
IRHMJ58160 1000K Rads (Si)
TO-254AA Tabless
International Rectifier's R5TM technology provides high performance power MOSFE... |
Description |
35 A, 100 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET RADIATION HARDENED POWER MOSFET SURFACE MOUNT (TO-254AA Tabless)
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File Size |
157.75K /
8 Page |
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