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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGFL45V1920A_04 MGFL45V1920A MGFL45V1920A04
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OCR Text |
...D BIAS CONDITIONS
VDS = 10 (V) ID = 6.5 (A) RG=25 (ohm)
)#6' 5174%'
(.#0)' &4#+0
)(
(Ta=25deg.C) Ratings -15 -15 22 -61 76 100 175 -65 / +175 Unit V V A mA mA W deg.C deg.C
ABSOLUTE MAXIMUM RATINGS
Symbol Paramete... |
Description |
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
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File Size |
248.84K /
3 Page |
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it Online |
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意法半导 STMICROELECTRONICS[STMicroelectronics]
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Part No. |
PD55008TR-E PD55008-E PD55008S-E PD55008STR-E
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OCR Text |
...
Table 1.
Symbol V(BR)DSS VGS ID PDISS TJ TSTG
Absolute maximum ratings (TCASE = 25C)
Parameter Drain-source voltage Gate-source volta...4 52.8 165 -65 to +150 Unit V V A W C C
1.2
Thermal data
Table 2.
Symbol RthJC
Thermal da... |
Description |
RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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File Size |
372.83K /
28 Page |
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it Online |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
MGF0921A
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OCR Text |
...Gate to drain breakdown voltage ID IGR IGF PT Tch Tstg
Drain current Reverse gate current Forward gate current Total power dissipation Cann...4.0mA VDS=3V,ID=500mA VDS=10V,ID=500mA,f=1.9GHz Pin=17dBm VDS=10V,ID=500mA,f=1.9GHz Vf Method --1.0 ... |
Description |
LnS Band GaAs FET L & S BAND GaAs FET
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File Size |
427.43K /
24 Page |
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it Online |
Download Datasheet |
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Price and Availability
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