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  min-60 Datasheet PDF File

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    HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 HYM64V4005GCD-60

INFINEON TECHNOLOGIES AG
Part No. HYM64VX005GCL-60 HYM64VX005GCD-60 HYM64V2005GCD-60 HYM64V4005GCD-60
OCR Text .......................... -0.5 to min (Vcc+0.5, 4.6) V Power supply voltage......................................................................60 144 pin-SODIMM-Modules AC Characteristics 5)6) TA = 0 to 70 C,VCC = 3.3 V 0.3V , tT = 2 ns Pa...
Description 2M X 64 EDO DRAM MODULE, 60 ns, ZMA144
4M X 64 EDO DRAM MODULE, 60 ns, ZMA144
144 pin SO-DIMM EDO-DRAM Modules 8MB , 16MB, 32MB & 64MB density
2M x 64 Bit EDO DRAM Module (SO-DIMM)...
4M x 64 Bit EDO DRAM Module (SO-DIMM)...

File Size 76.96K  /  15 Page

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    SIEMENS AG
Part No. HYB314405BJL-60 HYB314405BJL-70 Q67100-Q2124
OCR Text ...imit values unit test condition min. max. input high voltage v ih 2.0 v cc + 0.5 v 1) input low voltage v il C 1.0 0.8 v 1) ttl output high...60 version -70 version i cc1 C C C 70 60 55 ma 2) 3)4) standby v cc supply current ( ras = cas = we...
Description 1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)
1M x 4-Bit Dynamic RAM

File Size 1,366.47K  /  25 Page

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    SIEMENS AG
SIEMENS A G
Part No. HYB3164800T-60 HYB3165800T-60 HYB3165800T-50
OCR Text ...........................-0.5 to min (vcc+0.5,4.6) v power supply voltage......................................................................60 ns version ( ras, cas, address cycling: trc = trc min.) i cc1 C C 110 (140) 100 (120) ma ma 2) 3)...
Description 8M x 8-Bit Dynamic RAM
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 8M X 8 FAST PAGE DRAM, 60 ns, PDSO34

File Size 457.31K  /  28 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. HYM72V8010GS-60 HYM72V8010GS-50 HYM72V8000GS-60 HYM72V8000GS-50 Q67100-Q2085 Q67100-Q2086 HYM72V8000GS-50-
OCR Text .......................... -0.5 to min (Vcc+0.5, 4.6) V Power supply voltage......................................................................60 version -70 version (RAS, CAS, address cycling, tRC = tRC min.) Standby VCC supply current (RAS =...
Description 8M x 72 Bit ECC FPM DRAM Module buffered
8M x 72-Bit Dynamic RAM Module (ECC - Module)
8M x 72-Bit Dynamic RAM Module 8米72位动态随机存储器模块
8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168
Connector; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes 8M X 72 FAST PAGE DRAM MODULE, 50 ns, DMA168

File Size 84.49K  /  11 Page

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    Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. HYM72V4045GU-60 HYM72V4045GU-50 HYM64V4045GU-60 HYM64V4045GU-50 Q67100-Q2187 HYM64V4005GU-50 HYM64V4005GU-60 HYM72V4005GU-50 HYM72V4005GU-60 Q67100-Q2184 Q67100-Q2185 Q67100-Q2186
OCR Text .......................... -0.5 to min (Vcc+0.5, 4.6) V Power supply voltage......................................................................60 4M x 64/72 DRAM Module DC Characteristics for HYM64/72V4005 TA = 0 to 70 C; VCC = 3.3 V 0.3 V...
Description    3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module
4M x 72 Bit ECC DRAM Module unbuffered
4M x 64 Bit DRAM Module unbuffered
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 50 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 3.3 4米64位江户内.3分72位江户记忆体模组
GIGASTATION2 SNAP FITTINGF CONN, IVORY 4M X 64 EDO DRAM MODULE, 60 ns, DMA168
3.3V 4M x 64-Bit EDO-DRAM Module 3.3V 4M x 72-Bit EDO-DRAM Module 4M X 64 EDO DRAM MODULE, 60 ns, DMA168

File Size 94.87K  /  17 Page

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    60-JS6DT3

MTU Onsite Energy Corporation
Part No. 60-JS6DT3
OCR Text ...) Water Pump Capacity: gpm (lit/min) Heat Rejection to Coolant: BTUM (kW) Heat Rejection to Air to Air: BTUM (kW) Heat Radiated to Ambient: ...60-JS6dt3 WEIGHTS AND DIMENSIONS Drawing above for illustration purposes only, based on standa...
Description Diesel Engine-Generator Set

File Size 297.26K  /  4 Page

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    Avago Technologies, Ltd.
Part No. HYM53216000AM-60 HYM53216000AMG-60 HYM53216000ATM-60 HYM53216000ATMG-50 HYM53216000ATMG-60 HYM53216000ATMG-70 HYM53216000AM-50 HYM53216000AM-70 HYM53216000AMG-50 HYM53216000AMG-70 HYM53216000ATM-50 HYM53216000ATM-70
OCR Text ...0 c to 70 c) symbol parameter min. typ. max. unit vcc power supply voltage 4.5 5.0 5.5 v vih input high voltage 2.4 - vcc+1.0 v vil input ...60 70 3520 2880 2560 ma icc2 ttl standby current /ras=/cas 3 vih other inputs 3 vss 64 ma icc3 ...
Description x32 Fast Page Mode DRAM Module X32号快速页面模式内存模

File Size 186.37K  /  10 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. HYM368035GS-60 HYM368035S-60 Q67100-Q3018 HM368035 Q67100-Q3019 HYM368035S
OCR Text ....................... - 0.5 V to min (VCC + 0.5, 7.0) V Power supply voltage....................................................................60 ns version Standby VCC supply current (RAS = CAS = VIH) Average VCC supply current during RAS onl...
Description 8M x 36 Bit EDO DRAM Module with Parity
From old datasheet system
8M x 36-Bit EDO-DRAM Module

File Size 556.17K  /  10 Page

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    SIEMENS[Siemens Semiconductor Group]
Infineon
SIEMENS AG
Part No. HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020S Q67100-Q2007 SIEMENSAG-Q67100-Q985
OCR Text ......................... -0.5V to min (Vcc+0.5, 7.0) V Power supply voltage......................................................................60 version Standby VCC supply current (RAS = CAS = VIH) Average VCC supply current during RAS only r...
Description 8M x 36 Bit FPM DRAM Module with Parity
8M x 36 Bit DRAM Module with Parity
8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72
8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块

File Size 101.65K  /  10 Page

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    SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYM324020GS-60 HYM324020GS-50 HYM324020S-60 HYM324020S-50 Q67100-Q979 HYM324020S-GS50 Q67100-Q2005
OCR Text ..........................-0.5V to min (Vcc+0.5, 7.0) V Power supply voltage......................................................................60 ns version (RAS, CAS, address cycling: tRC = tRC min.) Symbol Limit Values min. max. Vcc+0.5 0.8 ...
Description 4M x 32-Bit Dynamic RAM Module 4米32位动态随机存储器模块
4M x 32-Bit Dynamic RAM Module 4M X 32 FAST PAGE DRAM MODULE, 60 ns, SMA72
4M x 32 Bit DRAM Module

File Size 57.66K  /  10 Page

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