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Para Light Electronics
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| Part No. |
L-51ROPT1D1
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| OCR Text |
...25 to 85 50 260 v v ma oc oc oc mw oc electro-optical characteristics:(ta=25 o c) supply current max. input current max. voltage gain freque...900 940 l-31ropt1d2 30 5 100 0.4 15/15 0.8 1.6 6.4 800 870 v ce =5v ee=0.1mw/cm 2 collector -base ca... |
| Description |
Receiver Module
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| File Size |
1,159.51K /
14 Page |
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it Online |
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New Japan Radio Co., Ltd.
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| Part No. |
NJL5901R
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| OCR Text |
... p d 30 6 45 ma v mw detector collector-emitter voltage emitter-collector voltage collector current collector power d...900 1000 0246810 forward current if(ma) output current io( a) output current vs. temperature 0 20 4... |
| Description |
COBP PHOTO REFLECTOR
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| File Size |
128.71K /
7 Page |
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it Online |
Download Datasheet
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Vishay Semiconductors
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| Part No. |
TFDU6103-TT3
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| OCR Text |
...rat ing curve, figure 6 p d 500 mw junction temperature t j 125 c ambient temperature range (operating) t amb - 25 + 85 c storage temperatu...900 nm e e 25 (2.5) 35 (3.5) mw/m 2 (w/cm 2 ) minimum irradiance e e in angular range, mir mode ... |
| Description |
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| File Size |
227.80K /
13 Page |
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it Online |
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Vishay
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| Part No. |
TFDS6401 TFD_6_01E
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| OCR Text |
...1 +0.5 VCC1 +0.5 Unit V V mA mA mw C C C C mA mA V V V mm mw/sr
-25 -25
Method: (1-1/e) encircled energy Maximum Intensity for EN60825...900 nm TFDU6101E, TFDS6401 9.6 kbit/s to 115.2 kbit/s l = 850 nm to 900 nm TFDS6501E/ TFDT6501E 1.15... |
| Description |
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation From old datasheet system
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| File Size |
242.02K /
17 Page |
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it Online |
Download Datasheet
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