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For ohm- Found Datasheets File :: 39873 Search Time::1.812ms
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				NXP Semiconductors
Part No.	A2T21S260-12S A2T21S260-12SR3
OCR Text	... (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1200 ma, p out = 65 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channe...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	457.46K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S161W12S A2T21S161W12SR3
OCR Text	...ts (1) (in nxp test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, p out = 38 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	301.43K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21S160-12S A2T21S160-12SR3
OCR Text	... (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 600 ma, p out = 38 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	452.74K / 13 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H450W19S A2T21H450W19SR6
OCR Text	...escale doherty test fixture, 50 ohm system) v dd =30vdc,i dqa = 800 ma, v gsb =0.7vdc, p out = 89 w avg., f = 2110 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	408.87K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H410-24S A2T21H410-24SR6
OCR Text	...escale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 600 ma, v gsb =0.4vdc, p out = 72 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	420.03K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H360-24SR6
OCR Text	...escale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =0.5vdc, p out = 63 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	497.43K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H360-23N A2T21H360-23NR6
OCR Text	...rty production test fixture, 50 ohm system) v dd =28vdc,i dqa = 500 ma, v gsb =0.5vdc, p out = 63 w avg., f = 2140 mhz, single--carrier w--cdma, iq magnit ude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	476.97K / 17 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H141W24SR3
OCR Text	...in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 400 ma, v gsb =0.65vdc,p out =36wavg., f = 2110 mhz, single--carrier w--cdma, iq magnitude clippi ng, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3....
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	343.17K / 10 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H140-24SR3
OCR Text	...in nxp doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 350 ma, v gsb =0.5vdc,p out =36wavg., f = 2110 mhz, single--carrier w--cdma, iq magnitude clippi ng, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.8...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	391.89K / 16 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	A2T21H100-25S A2T21H100-25SR3
OCR Text	...escale doherty test fixture, 50 ohm system) v dd =28vdc,i dqa = 250 ma, v gsb =0.2vdc,p out =18wavg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84...
Description	N--Channel Enhancement--Mode Lateral MOSFET
File Size	479.23K / 16 Page	View it Online	Download Datasheet

For ohm- Found Datasheets File :: 39873 Search Time::1.812ms
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