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  on-die Datasheet PDF File

For on-die Found Datasheets File :: 40397    Search Time::3.594ms    
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    IRF9130SMD

TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. IRF9130SMD
OCR Text ...APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 1 3 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 2 -100V -8A W 0.35W 0 .7 6 (0 ...die) A V ns TJ = 25C 4.7 300 3 8.7 8.7 mC nH (from 6mm down source lead to centre of...
Description P-Channel Power MOSFET For HI-REL Application(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω)(P沟道功率MOS场效应管,HI-REL应用(Vdss:-100V,Id(cont):-8A,Rds(on):0.35Ω))
P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 20.44K  /  2 Page

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    IRF9140

SEMELAB LTD
SEME-LAB[Seme LAB]
Part No. IRF9140
OCR Text ...POWER MOSFET VDSS ID(cont) RDS(on) FEATURES * HERMETICALLY SEALED TO-3 METAL PACKAGE 1 20.32 (0.800) 18.80 (0.740) dia. 7.87 (0.310...die) Internal Source Inductance (from 6mm down source lead to source bond pad) THERMAL CHARACTERISTI...
Description P-CHANNEL POWER MOSFET

File Size 21.26K  /  2 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text ... Features * -25A, -100V * rDS(ON) = 0.150 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching ...Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified ...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text On-Resistance N-Channel MOSFET Surface Mount Very Low Gate Charge and Switching Losses Fully Avalanche Rated S S S G 1 2 A A D D D ...die capability making it ideal in a variety of power applications. With these improvements, multiple...
Description Power MOSFET(Vdss=30V, Rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...n l l D VDSS = -100V RDS(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced p...die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistanc...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... D VDSS = -100V G S RDS(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced...die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratin...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text .... Features * 6A, 100V * rDS(ON) = 0.600 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching ...Die Internal Devices Measured From the Drain Inductances Lead, 6mm (0.25in) from Package to Center o...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9530-220M

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF9530-220M
OCR Text ...APPLICATIONS VDSS ID(cont) RDS(on) FEATURES 0.89 1.14 16.38 16.89 13.39 13.64 123 12.70 19.05 -100V -9.3A W 0.31W 10.41 1...die) A V ns TJ = 25C -4.7 250 3 8.7 8.7 mC nH (from 6mm down source lead to centre o...
Description P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

File Size 18.21K  /  2 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...n l l D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced pr...die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... Rated D VDSS = -100V RDS(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utiliz...die contact --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5 D S Source-Drain Ratin...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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