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Part No. |
MT4LSDT232UDG-8XX
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OCR Text |
...read/write commands, to select one location out of the memory array in the respective device bank. a10 is sampled during a precharge co mmand to determines whether the precharge applies to one device bank (a10 low, device bank selected b... |
Description |
2M X 32 SYNCHRONOUS DRAM MODULE, 6 ns, DMA100
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File Size |
342.55K /
23 Page |
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INTEGRATED SILICON SOLUTION INC
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Part No. |
IS43DR16160A-37CBL
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OCR Text |
...rmines if the mode register or one of the extended mode registers is to be accessed during a mrs or emrs command cycle. a0 - a12 inp...bank. a10 is sampled during a precharge command to determine whether the precharge applies to on... |
Description |
16M X 16 DDR DRAM, 0.5 ns, PBGA84
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File Size |
1,004.91K /
48 Page |
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HYNIX SEMICONDUCTOR INC
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Part No. |
HYM71V633201TH-75
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OCR Text |
...400mil 54pin tsop - ii package, one 2kbit eeprom in 8pin tssop package on a 168pin glass - epoxy pr inted circuit board. one 0.22uf and one...bank : two physical bank auto refresh and self refresh 4096 refresh cycles / 64ms ... |
Description |
32M X 64 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168
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File Size |
345.81K /
13 Page |
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Atmel, Corp.
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Part No. |
AT91SAM9G45
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OCR Text |
... slc nand flash with ecc ? one 64-kbyte internal sram, single-cycle access at system speed or processor speed through tcm...bank select output vddiom0 ddr_vref reference voltage input vddiom0 external bus interface - ebi d0 ... |
Description |
(In-Home Display (IHD) Units)
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File Size |
317.75K /
53 Page |
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it Online |
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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Part No. |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
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OCR Text |
... deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CLK, CKE and DQM Selects bank to be activated during RAS activity Selects bank to be read/written during CAS a... |
Description |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
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File Size |
142.41K /
12 Page |
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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Part No. |
HY57V641620HGT-6 HY57V641620HGT-7 HY57V641620HGT-5 HY57V641620HGT-55 HY57V641620HGT-H HY57V641620HG HY57V641620HGT-P HY57V641620HGLT-P HY57V641620HGT-S HY57V641620HGT-8 HY57V641620HGT-K
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OCR Text |
... deactivated, the SDRAM will be one of the states among power down, suspend or self refresh Enables or disables all inputs except CLK, CKE a...Bank Address
A0 ~ A11
Address
Row Address Strobe, R A S , C A S, W E Column Address Strobe,... |
Description |
4 Banks x 1M x 16Bit Synchronous DRAM 4银行× 1米16位同步DRAM 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
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File Size |
84.91K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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