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04365 SC5272 040N03 04365 X9313UPI IRFZ44N 39311 01010
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  precharged Datasheet PDF File

For precharged Found Datasheets File :: 1954    Search Time::1.422ms    
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    HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 HY5DV641622AT-5 HY5DV641622AT

HYNIX[Hynix Semiconductor]
Part No. HY5DV641622AT-4 HY5DV641622AT-33 HY5DV641622AT-36 HY5DV641622AT-5 HY5DV641622AT
OCR Text ...IGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET comm...
Description 64M(4Mx16) DDR SDRAM

File Size 272.92K  /  27 Page

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    HM5425161B HM5425161BTT-10 HM5425161BTT-75A HM5425161BTT-75B HM5425401B HM5425401BTT-10 HM5425401BTT-75A HM5425401BTT-75

ELPIDA[Elpida Memory]
Part No. HM5425161B HM5425161BTT-10 HM5425161BTT-75A HM5425161BTT-75B HM5425401B HM5425401BTT-10 HM5425401BTT-75A HM5425401BTT-75B HM5425801B HM5425801BTT-10 HM5425801BTT-75A HM5425801BTT-75B
OCR Text ...ommand is issued, all banks are precharged. If A10 = Low when a precharge command is issued, only the bank that is selected by BA1/BA0 is precharged. If A10 = High when read or write command, auto-precharge function is enabled. While A10 = ...
Description 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 】 16-bit 】 4-bank/8-Mword 】 8-bit 】 4-bank/ 16-Mword 】 4-bit 】 4-bank
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank

File Size 472.06K  /  65 Page

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    HYB18T256400AC HYS72T64020GR-5-A HYB18T256800AC HYS72T32000GR HYS72T32000GR-37-A HYS72T32000GR-3-A HYS72T32000GR-5-A HYS

INFINEON[Infineon Technologies AG]
Part No. HYB18T256400AC HYS72T64020GR-5-A HYB18T256800AC HYS72T32000GR HYS72T32000GR-37-A HYS72T32000GR-3-A HYS72T32000GR-5-A HYS72T64001GR HYS72T64001GR-37-A HYS72T64001GR-3-A HYS72T64001GR-5-A HYS72T64020GR HYS72T64020GR-37-A HYS72T64020GR-3-A
OCR Text ... BA[1:0] defines the bank to be precharged. If AP is low, Auto-Precharge is disabled. During a Precharge command cycle, AP is used in conjunction with BA[1:0] to control which bank(s) to precharge. If AP is high, all banks will be precharge...
Description DDR2 Registered DIMM Modules

File Size 455.08K  /  24 Page

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    HYB25D256400BT HYB25D256800BTL-8 HYB25D256160BC-6 HYB25D256160BC-7 HYB25D256160BC-7F HYB25D256160BC-8 HYB25D256160BCL-6

INFINEON[Infineon Technologies AG]
Part No. HYB25D256400BT HYB25D256800BTL-8 HYB25D256160BC-6 HYB25D256160BC-7 HYB25D256160BC-7F HYB25D256160BC-8 HYB25D256160BCL-6 HYB25D256160BCL-7 HYB25D256160BCL-7F HYB25D256160BCL-8 HYB25D256160BT-6 HYB25D256160BT-7 HYB25D256160BT-7F HYB25D256160BT-8 HYB25D256160BTL-6 HYB25D256160BTL-7 HYB25D256160BTL-7F HYB25D256160BTL-8 HYB25D256400BC-6 HYB25D256400BC-7 HYB25D256400BC-7F HYB25D256400BC-8 HYB25D256400BCL-6 HYB25D256400BCL-7 HYB25D256400BCL-7F HYB25D256400BCL-8 HYB25D256400BT-6 HYB25D256400BT-7 HYB25D256400BT-7F HYB25D256400BT-8 HYB25D256400BTL-6 HYB25D256400BTL-7 HYB25D256400BTL-7F HYB25D256400BTL-8 HYB25D256800BC-6 HYB25D256800BC-7 HYB25D256800BC-7F HYB25D256800BC-8 HYB25D256800BCL-6 HYB25D256800BCL-7 HYB25D256800BCL-7F HYB25D256800BCL-8 HYB25D256800BT-6 HYB25D256800BT-7 HYB25D256800BT-7F HYB25D256800BT-8 HYB25D256800BTL-6 HYB25D256800BTL-7 HYB25D256800BTL-7F
OCR Text ...IGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during a Mode Register Set command. Data Input/Output: Data bus. Data Strobe: Output with read data, input with write ...
Description 256-Mbit Double Data Rate SDRAM, Die Rev. B

File Size 1,838.18K  /  77 Page

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    HYB39S256400 HYB39S256400T-10 HYB39S256400T-8 HYB39S256400T-8B HYB39S256800 HYB39S256160T HYB39S256800T-8B HYB39S256800T

SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. HYB39S256400 HYB39S256400T-10 HYB39S256400T-8 HYB39S256400T-8B HYB39S256800 HYB39S256160T HYB39S256800T-8B HYB39S256800T-10 HYB39S256800T-8
OCR Text ...BA0, BA1 defines the bank to be precharged. If A10 is low, autoprecharge is disabled. During a Precharge command cycle, A10 (= AP) is used in conjunction with BA0 and BA1 to control which bank(s) to precharge. If A10 is high, all four banks...
Description 256 MBit Synchronous DRAM

File Size 275.87K  /  56 Page

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    HY5DU121622BLTP HY5DU12422 HY5DU121622BT-D43 HY5DU12422BT-D43 HY5DU12822BT-D4 HY5DU12822BT-D43

Hynix Semiconductor
ETC
Part No. HY5DU121622BLTP HY5DU12422 HY5DU121622BT-D43 HY5DU12422BT-D43 HY5DU12822BT-D4 HY5DU12822BT-D43
OCR Text ...IGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET comm...
Description DDR SDRAM - 512Mb
HY5DU12422BTP

File Size 389.87K  /  37 Page

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    IS42S16400 IS42S16400A 42S16400A

ISSI
Integrated Silicon Solution, Inc
N.A.
Part No. IS42S16400 IS42S16400A 42S16400A
OCR Text ...etermine if all banks are to be precharged (A10 HIGH) or bank selected by BA0, BA1 (LOW). The address inputs also provide the op-code during a LOAD MODE REGISTER command. Input Pin Input Pin Input Pin Bank Select Address: BA0 and BA1 define...
Description 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM

File Size 468.04K  /  55 Page

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    MA17502 MAQ17502FD MAQ17502CS MAQ17502FB MAQ17502CE

DYNEX[Dynex Semiconductor]
Part No. MA17502 MAQ17502FD MAQ17502CS MAQ17502FB MAQ17502CE
OCR Text ...f CLKPCN, the internal M Bus is precharged to the high state to accelerate its response. The normal CLKPCN period is defined by five OSC cycles (two cycles low and three cycles high). When a microcode branch is indicated by the EU, the low ...
Description Radiation Hard MIL-STD-1750A Control Unit

File Size 271.57K  /  30 Page

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    HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT-D4_D43 HY5DU56422BT-D4 HY5DU56822BT-D HY5DU56822BT-D4/D43 HY5DU56422BT

Hynix Semiconductor
http://
Part No. HY5DU56822BT-D43 HY5DU56822BT-D4_D43 HY5DU56422BT-D4_D43 HY5DU56422BT-D4 HY5DU56822BT-D HY5DU56822BT-D4/D43 HY5DU56422BT-D4/D43 HY5DU56422BT-H HY5DU56422BT-M HY5DU56422BT-K
OCR Text ...IGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op code during a MODE REGISTER SET command. BA0 and BA1 define which mode register is loaded during the MODE REGISTER SET comm...
Description DDR SDRAM - 256Mb
256M-P DDR SDRAM
IC,SDRAM,DDR,4X8MX8,CMOS,TSSOP,66PIN,PLASTIC

File Size 214.36K  /  32 Page

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    K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25

SAMSUNG[Samsung semiconductor]
Part No. K4N26323AE K4N26323AE-GC20 K4N26323AE-GC22 K4N26323AE-GC25
OCR Text ...IGH). If only one bank is to be precharged, the bank is selected by BA0, BA1. The address inputs also provide the op-code during Mode Register Set commands. CKE Input CS RAS, CAS, WE DM0 ~DM3 BA0, BA1 Input Input Input Inp...
Description 128Mbit GDDR2 SDRAM

File Size 822.96K  /  52 Page

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For precharged Found Datasheets File :: 1954    Search Time::1.422ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

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