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Taiwan Semiconductor Co...
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Part No. |
TSM058N06PQ56 TSM058N06PQ56RLG
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OCR Text |
...te 1) i dm 240 a single pulse avalanche energy , l=0.1mh e as 400 mj maximum power dissipation (note 2) t c =25c p d ...30a r ds(on) -- 4.8 5.8 m ? gate threshold voltage v ds = v gs , i d = 250a v gs(th) 2... |
Description |
60V N-Channel MOSFET
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File Size |
628.25K /
6 Page |
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it Online |
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Sangdest Microelectroni...
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Part No. |
STB30100
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OCR Text |
...leg) i fsm 8.3 ms, half sine pulse 300 a
sangdest microelectronics technical data ...30a, pulse, t j = 25 c 0.75 v forward voltage drop* v f2 @ 30a, pulse, t j = 125 c 0.70... |
Description |
SCHOTTKY RECTIFIER
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File Size |
102.66K /
6 Page |
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it Online |
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Micross Components
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Part No. |
ICE30N60W
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OCR Text |
...n current 30 a t c = 25c i d , pulse pulsed drain current 103 a t c = 25c e as avalanche energy, single pulse 1100 mj i d = 18a i ar aval...30a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 313 w t... |
Description |
N-Channel Enhancement Mode MOSFET
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File Size |
751.84K /
4 Page |
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it Online |
Download Datasheet
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Price and Availability
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