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				Samsung semiconductor
Part No.	K7A201800A
OCR Text	...te and reduces Stand-by current regardless of CLK. The K7A201800A is fabricated using SAMSUNGs high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce...
Description	128Kx18 Synchronous SRAM
File Size	402.42K / 15 Page	View it Online	Download Datasheet

				GSI[GSI Technology]
Part No.	GS816018BT-200I GS816018BT-150 GS816018BT-150I GS816018BT-200 GS816018BT-250 GS816018BT-250I GS816036BT-250I GS816018BGT-150 GS816018BGT-150I GS816018BGT-200 GS816018BGT-200I GS816018BGT-250 GS816018BGT-250I GS816018BT GS816032BGT-150 GS816032BGT-150I GS816032BGT-200 GS816032BGT-200I GS816032BGT-250 GS816032BGT-250I GS816032BT-150 GS816032BT-150I GS816032BT-200 GS816032BT-200I GS816032BT-250 GS816032BT-250I GS816036BGT-150 GS816036BGT-150I GS816036BGT-200 GS816036BGT-200I GS816036BGT-250 GS816036BGT-250I GS816036BT-150 GS816036BT-150I GS816036BT-200 GS816036BT-200I GS816036BT-250
OCR Text	... writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mo...
Description	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
File Size	580.69K / 24 Page	View it Online	Download Datasheet

				Integrated Device Techn...
Part No.	709359L9PFG8 709349L9PFGI
OCR Text	...b and ub are single buffered regardless of state of ft /pipe. 5. ce o and ce 1 are single buffered when ft /pipe = v il . ce o and ce 1 are double buffered when ft /pipe = v ih , i.e. the signals take two cycles to deselect. trut...
Description	HIGH-SPEED 8/4K x 18 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
File Size	676.91K / 15 Page	View it Online	Download Datasheet

				GSI[GSI Technology]
Part No.	GS816018BT-200V GS816018BT-150IV GS816018BT-150V GS816018BT-200IV GS816018BT-250IV GS816018BT-250V GS816018BT-V GS816036BT-250V GS816018BGT-150IV GS816018BGT-150V GS816018BGT-200IV GS816018BGT-200V GS816018BGT-250IV GS816018BGT-250V GS816032BGT-150IV GS816032BGT-150V GS816032BGT-200IV GS816032BGT-200V GS816032BGT-250IV GS816032BGT-250V GS816032BT-150IV GS816032BT-150V GS816032BT-200IV GS816032BT-200V GS816032BT-250IV GS816032BT-250V GS816036BGT-150IV GS816036BGT-150V GS816036BGT-200IV GS816036BGT-200V GS816036BGT-250IV GS816036BGT-250V GS816036BT-150IV GS816036BT-150V GS816036BT-200IV GS816036BT-200V GS816036BT-250IV
OCR Text	... writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mo...
Description	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
File Size	592.45K / 23 Page	View it Online	Download Datasheet

				GSI[GSI Technology]
Part No.	GS8160E18BGT-250IV GS8160E18BT-250IV GS8160E18BT-150IV GS8160E18BT-150V GS8160E18BT-200IV GS8160E18BT-200V GS8160E18BT-250V GS8160E18BT-V GS8160E36BT-250V GS8160E18BGT-150IV GS8160E18BGT-150V GS8160E18BGT-200IV GS8160E18BGT-200V GS8160E18BGT-250V GS8160E32BGT-150IV GS8160E32BGT-150V GS8160E32BGT-200IV GS8160E32BGT-200V GS8160E32BGT-250IV GS8160E32BGT-250V GS8160E32BT-150IV GS8160E32BT-150V GS8160E32BT-200IV GS8160E32BT-200V GS8160E32BT-250IV GS8160E32BT-250V GS8160E36BGT-150IV GS8160E36BGT-150V GS8160E36BGT-200IV GS8160E36BGT-200V GS8160E36BGT-250IV GS8160E36BGT-250V GS8160E36BT-150IV GS8160E36BT-150V GS8160E36BT-200IV GS8160E36BT-200V GS8160E36BT-250IV
OCR Text	... writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mo...
Description	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
File Size	590.91K / 23 Page	View it Online	Download Datasheet

				GSI[GSI Technology]
Part No.	GS8160E18BT GS8160E18BT-150 GS8160E18BT-150I GS8160E18BT-200 GS8160E18BT-200I GS8160E18BT-250 GS8160E18BT-250I GS8160E36BT-250I GS8160E18BGT-150 GS8160E18BGT-150I GS8160E18BGT-200 GS8160E18BGT-200I GS8160E18BGT-250 GS8160E18BGT-250I GS8160E32BGT-150 GS8160E32BGT-150I GS8160E32BGT-200 GS8160E32BGT-200I GS8160E32BGT-250 GS8160E32BGT-250I GS8160E32BT-150 GS8160E32BT-150I GS8160E32BT-200 GS8160E32BT-200I GS8160E32BT-250 GS8160E32BT-250I GS8160E36BGT-150 GS8160E36BGT-150I GS8160E36BGT-200 GS8160E36BGT-200I GS8160E36BGT-250 GS8160E36BGT-250I GS8160E36BT-150 GS8160E36BT-150I GS8160E36BT-200 GS8160E36BT-200I GS8160E36BT-250
OCR Text	... writing all bytes at one time, regardless of the Byte Write control inputs. Sleep Mode Low power (Sleep mode) is attained through the assertion (High) of the ZZ signal, or by stopping the clock (CK). Memory data is retained during Sleep mo...
Description	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
File Size	577.92K / 23 Page	View it Online	Download Datasheet

				GSI[GSI Technology]
Part No.	GS8160EV18AT-150I GS8160EV18AT-250I GS8160EV18AT-350 GS8160EV18AT-350I GS8160EV18AT-333 GS8160EV18AT-333I GS8160EV18AT-300 GS8160EV18AT-300I GS8160EV36AT-350I GS8160EV18AT GS8160EV18AT-150 GS8160EV18AT-200 GS8160EV18AT-200I GS8160EV18AT-250 GS8160EV32AT-150 GS8160EV32AT-150I GS8160EV32AT-200 GS8160EV32AT-200I GS8160EV32AT-250 GS8160EV32AT-250I GS8160EV32AT-300 GS8160EV32AT-300I GS8160EV32AT-333 GS8160EV32AT-333I GS8160EV32AT-350 GS8160EV32AT-350I GS8160EV36AT-150 GS8160EV36AT-150I GS8160EV36AT-200 GS8160EV36AT-200I GS8160EV36AT-250 GS8160EV36AT-250I GS8160EV36AT-300 GS8160EV36AT-300I GS8160EV36AT-333 GS8160EV36AT-333I GS8160EV36AT-350
OCR Text	... writing all bytes at one time, regardless of the Byte Write control inputs. Controls Sleep Mode Low power (Sleep mode) is attained through the assertion Addresses, data I/Os, chip enables (E1, E2, E3), address burst (High) of the ...
Description	1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs
File Size	487.26K / 24 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	74HC40103DB 74HC40103N 74HC40103PW
OCR Text	...positive-going clock transition regardless of the state of te. when the asynchronous preset enable input ( pl) is low, data at the jam input (p0 to p7) is asynchronously forced into the counter regardless of the state of pe, te, or cp. the ...
Description	8-bit synchronous binary down counter
File Size	128.28K / 25 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation
Part No.	BCR16UM
OCR Text	... 80 140 24 6141618 curves apply regardless of conduction angle 360 conduction resistive, inductive loads maximum on-state power dissipation on-state power dissipation (w) rms on-state current ( a ) allowable case temperature vs. rms on-...
Description	MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
File Size	62.97K / 5 Page	View it Online	Download Datasheet

For regardless Found Datasheets File :: 12326 Search Time::2.64ms
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