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  rg-141 Datasheet PDF File

For rg-141 Found Datasheets File :: 869    Search Time::2.828ms    
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    ST Microelectronics
Part No. STF20NM60A
OCR Text ...stics typical switching time vs rg typical drain current slope vs rg typical drain source voltage slope vs rg typical switching losses vs rg...141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data stb...
Description N-CHANNEL MOSFET

File Size 327.23K  /  12 Page

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    UPA1851 UPA1851GR-9JG PA1851 D12733EJ2V0DS00

NEC Corp.
NEC[NEC]
Part No. UPA1851 UPA1851GR-9JG PA1851 D12733EJ2V0DS00
OCR Text ... V ID = -2.0 A VGS(on) = -4.0 V RG = 10 VDD = -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 20 A / s -1.0 1 -1.5 3.5 83 141 163 220 240 50 110 500 160 310 8.3 2.4 4.7 0.82 40 6.5 105 210 250 MIN. TYP. M...
Description P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
From old datasheet system

File Size 63.43K  /  8 Page

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    MGP11N60E

Motorola, Inc
Part No. MGP11N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC...
Description Insulated Gate Bipolar Transistor

File Size 93.72K  /  6 Page

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    MGP14N60E

Motorola, Inc
Part No. MGP14N60E
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC...
Description Insulated Gate Bipolar Transistor

File Size 95.07K  /  6 Page

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    60-8489-020-001-049 068489001001000 068489001003000 668489001023000 068489001002000 668489001021000 668489001022000

AVX Corporation
Part No. 60-8489-020-001-049 068489001001000 068489001003000 668489001023000 068489001002000 668489001021000 668489001022000
OCR Text ....05/0.041 1.70/0.067 2.25/0.089 rg 196, 178 60 8489 020 001 049 crimp solder 1.70/0.067 2.70/0.106 3.20/0.126 rg 179, 316 (single) , 60 848...141 rg 316 ( braided) , 60 8489 020 003 049 rg 187 (double) solder solder 1.30/0.051 1.90/0.075 2.2...
Description Style M Connectors

File Size 332.55K  /  7 Page

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    SGW10N60RUF

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. SGW10N60RUF
OCR Text ...nC nH VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 125C @ TC = VCC = 300 V, VGE = 15V 100C VCE = 300 V, IC = 10A, VGE = 15V Measured 5mm f...
Description FEEDTHRU CAPACITOR, 220PF 0.5A 100VFEEDTHRU CAPACITOR, 220PF 0.5A 100V; Capacitance:0.22nF; Voltage rating, DC:100V; Capacitor dielectric type:Ceramic Multi-Layer; Tolerance, :50%; Tolerance, -:20%; Temp, op. max:125(degree C);
Short Circuit Rated IGBT

File Size 539.48K  /  7 Page

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    SGW10N60RUFD SGW10N60RUFDTM

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. SGW10N60RUFD SGW10N60RUFDTM
OCR Text ...nC nH VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 10A, RG = 20, VGE = 15V, Inductive Load, TC = 125C @ TC = VCC = 300 V, VGE = 15V 100C VCE = 300 V, IC = 10A, VGE = 15V Measured 5mm f...
Description Discrete, Short Circuit Rated IGBT with Diode

File Size 594.14K  /  8 Page

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    STD5NM60-1 STP8NM60FP STD5NM60 STP8NM60

STMICROELECTRONICS[STMicroelectronics]
Part No. STD5NM60-1 STP8NM60FP STD5NM60 STP8NM60
OCR Text ...(1) Ciss Coss Crss Coss eq. (2) RG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Equi...141 0.645 0.366 0.126 inch TYP. MAX. 0.181 0.106 0.108 0.027 0.039 0.067 0.067 0.204 0.106 0.409 ...
Description N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh?/a> Power MOSFET
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh Power MOSFET
N-CHANNEL 600V - 0.9ohm - 8A TO-220/TO-220FP/DPAK/IPAK MDmesh⑩ Power MOSFET

File Size 601.81K  /  13 Page

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    IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU EA0520N IRFRU120A

Fairchild Semiconductor
Part No. IRFR120A IRFU120A IRFR120ATF IRFR120ATM IRFU120ATU EA0520N IRFRU120A
OCR Text ...1MHz See Fig 5 VDD=50V,ID=9.2A, RG=18 See Fig 13 VDS=80V,VGS=10V, ID=9.2A See Fig 6 & Fig 12 45 OO 45 OO Source-Drain Diode Ratings and Characteristics Symbol IS ISM VSD trr Qrr Characteristic Continuous Source Current Pulsed-Source Cu...
Description    Advanced Power MOSFET
Avalanche Rugged Technology
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFU110
100V N-Channel A-FET / Substitute of IRFR120
(IRFR120A / IRFU120A) Advanced Power MOSFET

File Size 254.49K  /  7 Page

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    MGFK38A3745 MGFK38A374511

Mitsubishi Electric Semiconductor
Part No. MGFK38A3745 MGFK38A374511
OCR Text ... ? vds=10v ? id=1.5a ? rg=100ohm absolute maximum ratings (ta=25 ? c) symbol parameter ratings unit vgdo gate to dr...141.21 2.23 105.99 0.11 93.61 0.33 -91.26 14.9 0.50 -148.69 2.08 97.52 0.10 85.62 0.34 -103.83 15...
Description X/Ku band internally matched power GaAs FET

File Size 192.90K  /  4 Page

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For rg-141 Found Datasheets File :: 869    Search Time::2.828ms    
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