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				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	ALP121AGX
OCR Text	...Note1 Ver.1.6 12898 13001 rm (iM) No.6754-1/8 ALP121AGX Absolute Maximum Ratings at VSS=0V item H driver power supply voltage V dr...i T F T -L C D Horizontal scanner Vertical scanner Video chrom a signal processing Display ar...
Description	Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; insert Arrangement:12-35 RoHS Compliant: No Low-Temperature Polysilicon 1.5-inch TFT LCD Module
File Size	660.53K / 8 Page	View it Online	Download Datasheet

				Sanyo Electric Co.,Ltd. SANYO[Sanyo Semicon Device]
Part No.	ALP121AXX
OCR Text	... mm g Remarks Note1 13001 rm (iM) No.6755-1/8 ALP121AXX Absolute Maximum Ratings at VSS=0V item H driver power supply voltage V dr...i T F T -L C D Horizontal scanner Vertical scanner Video chrom a signal processing Display ar...
Description	Circular Connector; No. of Contacts:22; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No Low-Temperature Polysilicon 1.5-inch TFT LCD Module
File Size	641.67K / 8 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 44 176 30 40 450 3.6 -55 to 150 300 44 50 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description	POWER MOS Vi 500V 44A 0.100 Ohm Power MOS ViTM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5014B2LC APT5014LLC APT5014
OCR Text	...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 37 148 30 40 450 3.6 -55 to 150 300 37 35 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description	POWER MOS Vi 500V 37A 0.140 Ohm Power MOS ViTM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. 电源MOS ViTM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	34.16K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology
Part No.	APT5014BFLL APT5014SFLL
OCR Text	...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG = 1.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX...i = 35A j G L 5 dv/ numbers reflect the limitations of the test circuit rather than the dt device it...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.46K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd. Advanced Power Technology, Ltd.
Part No.	APT5015BLC
OCR Text	...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 32 128 30 40 370 2.96 300 32 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volt...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description	POWER MOS Vi 500V 32A 0.150 Ohm Power MOS ViTM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs 电源MOS ViTM是一种低栅极电荷新一代高压N沟道增强型功率MOSFET
File Size	28.40K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5016 APT5016BFLL APT5016SFLL
OCR Text	...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX...i = 30A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Puls...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.90K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017BLC APT5017SLC APT10086BLC APT10086SLC
OCR Text	...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 30 120 30 40 370 2.96 300 30 30 -55 to 150 (Repetitive and Non-Repetitive) 1 4 Volt...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description	POWER MOS Vi 500V 30A 0.170 Ohm Power MOS ViTM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.77K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5018BFLL APT5018SFLL
OCR Text	...s) AL iC HN EC iON E T AT NC rm VA FO AD iN iD = iD [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W iD = iD [Cont.] @ 25C MiN TYP 2 ns MAX...i = 27A j G L 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 Puls...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.84K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5020BLC APT5020SLC
OCR Text	...y AL iC HN EC ON Ti ED AT NC rm VA FO AD iN 500 26 104 30 40 300 2.4 -55 to 150 300 26 30 (Repetitive and Non-Repetitive) 1 4 Volts...i D(on) x R DS(on) Max, VGS = 10V) 2 Drain-Source On-State Resistance (VGS = 10V, 0.5 iD[Cont...
Description	POWER MOS Vi 500V 26A 0.200 Ohm Power MOS ViTM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Power MOS ViTM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.78K / 2 Page	View it Online	Download Datasheet

For rm i Found Datasheets File :: 18967 Search Time::3.765ms
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