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ONSEMI[ON Semiconductor]
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Part No. |
AND8054
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OCR Text |
...replaced with a three resistor "tee" network in order to use readily available resistors, as shown in Figure 9.
Limit Circuit V1 Integrator 6 = 90 Integrator 6 = 90 V2 Differentiator V3 6 = 180
Figure 7. Ratio Oscillator Block Diag... |
Description |
Designing RC Oscillator Circuits with Low Voltage Operational Amplifiers and Comparators for Precision Sensor Applications
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File Size |
168.61K /
28 Page |
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TriQuint Semiconductor,Inc.
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Part No. |
TGA4953-SCC-SL
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OCR Text |
...obe 7 / power bias die probe: v tee = 8v, adjust v g to achieve i d = 175ma 5%, v ctrl = +1.5v 8 / value is the difference with the 500mv input measurement. result is the absolute value. note: at the die level, drain bias is applied through... |
Description |
9.9-12.5Gb/s Optical Modulator Driver
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File Size |
1,768.48K /
19 Page |
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TriQuint Semiconductor, Inc.
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Part No. |
TGA1328-SCC
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OCR Text |
...the rf output port using a bias tee 12 v 10 v i + id positive supply current biased thru on-chip drain termination biased thru the rf output port using a bias tee 110 ma 250 ma 1/ p d power dissipation 2.25 w 2/ vg ig negative gate ... |
Description |
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File Size |
912.92K /
10 Page |
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TriQuint Semiconductor, Inc.
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Part No. |
TGA4954-SL
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OCR Text |
...obe 5 / power bias die probe: v tee = 8v, adjust v g to achieve idd = 175ma 5%, v ctrl = +1.5v note: at the die level, drain bias is applied through the rf output port using a bias tee, voltage is at the dc input to the bias tee
product... |
Description |
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File Size |
2,323.73K /
14 Page |
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it Online |
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TriQuint Semiconductor,Inc.
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Part No. |
TGA4954-SL
|
OCR Text |
...obe 7 / power bias die probe: v tee = 8v, adjust v g to achieve i d = 175ma 5%, v ctrl = +1.5v 8 / value is the difference with the 500mv input measurement. result is the absolute value. note: at the die level, drain bias is applied through... |
Description |
9.9 - 12.5 Gb/s Optical Modulator Driver
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File Size |
1,048.61K /
14 Page |
View
it Online |
Download Datasheet
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