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				WEDC[White Electronic Designs Corporation]
Part No.	ENH104V2-600 ENH104V2-380 ENH104V2-450
OCR Text	.... Input power voltage is single 3.3V/5V for LCD driving. Both 3.3V-CMOS and 5.0V-CMOS level voltage are acceptable for logic input voltage. ...600 ENH104V2-380/450/600 Color TFT-LCD Module Features SPECIFICATIONS SPECIFICATION 211.2 (H) x...
Description	ENH104V2-380/450/600 Color TFT-LCD Module Features ENH104V2-380/450/600 Color TFT-LCD Module Features
File Size	133.47K / 15 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BYC10-600
OCR Text	...orward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150C prior to surge with reapplied VRWM(max) Storage temperature Operating junction te...600 V VR = 500 V; Tj = 100 C IF = 10 A to VR = 400 V; dIF/dt = 500 A/s IF = 10 A to VR = 400 V; dIF/...
Description	Rectifier diode ultrafast, low switching loss Rectifier diode ultrafast/ low switching loss
File Size	57.35K / 6 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics SGS Thomson Microelectronics
Part No.	BY233-600
OCR Text	...) Junction-case Parameter Value 3 Unit C/W August 1998 Ed : 1A 1/5 BY 233-600 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Synbol IR Tj = 25C Tj = 100C VF Tj = 25C Tj = 100C IF = 8A Test Conditions VR = VRRM Min. Typ. Max. 2...
Description	10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC Fast Recovery Rectifier Diodes(快速恢复整流二极管)
File Size	78.66K / 5 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BYC8-600 BYC8-600.127 BYC8-600-15
OCR Text	...ing losses in associated mosfet 3. applications ? continuous current mode (ccm) power factor correction (pfc) ? half-bridge/full-bridge swit...600 v i f(av) average forward current = 0.5 ; t mb 109 c; square-wave pulse; fig. 1 ; fig. 2 - ...
Description	Hyperfast power diode in a SOD59 (2-lead TO-220AC) plastic package BYC8-600_15
File Size	181.70K / 9 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	1SR139-600
OCR Text	...liability ROHM : MSR 291 3.00.2 6 291 2.50.2 Construction Silicon epitaxial planar Manufacture Date St...600 1 40 150 -40 to +150 Unit V V A A Electrical characteristics (Ta=25C) Parameter Forward vo...
Description	Rectifier diode
File Size	153.87K / 4 Page	View it Online	Download Datasheet

				SemiHow Co.,Ltd.
Part No.	HTM4-600
OCR Text	3. gate ? repetitive peak off- state voltage: 600v ? r.m.s on ?state current (i t(rms) = 4a) ? high commutation dv/dt features htc4-600 2 1 3 to-126 2 1 3 to-126ml htm4-600 general description the triac htx4-600 is suitable fo r ac switchin...
Description	600V 4A TRIAC
File Size	338.76K / 6 Page	View it Online	Download Datasheet

				ROHM[Rohm]
Part No.	1SR154-600
OCR Text	... 0.10.02 0.1 5.00.3 1 5 4.50.2 1.20.3 Features 1) Small power mold type. (PMDS) 2) High reliability. 2.0 ...600 1 30 150 -55 to +150 5.30.1 0.05 9.50.1 Unit V V A A Min. - Typ. - Max. 1.1 10...
Description	Rectifier diode
File Size	148.38K / 4 Page	View it Online	Download Datasheet

				VISHAY SEMICONDUCTORS Vishay Siliconix
Part No.	BYM10-600-E3/75 BYM10-600-E3/1 BYM10-100-E3
OCR Text	...on is covered by patent no. 3,996,602, brazed-lead assembly to patent no. 3,930,306 major ratings and characteristics i f(av) 1.0 a ...600 bym 10-800 bym 10-1000 unit standard recovery device: 1st band is white gl41a gl41b gl41d gl41...
Description	1 A, 600 V, SILICON, SIGNAL DIODE, DO-213AB Surface Mount Glass Passivated Junction Rectifier
File Size	97.06K / 5 Page	View it Online	Download Datasheet

				VISHAY SEMICONDUCTORS
Part No.	BY500-600-E3 BY500-200/91-E3
OCR Text	...40 60 8 0 100 120 140 0 1.0 2.0 3.0 4.0 5.0 6.0 0. 8 x0. 8 x 0.04" (20 x 20 x 1m m) copper heatsinks 0.375" (9.5m m) lead length t a =am b ient temperat u re t l = lead temperat u re resisti v eor ind u cti v e load p.c.b. mo u nted on 0.2 ...
Description	5 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD
File Size	297.55K / 4 Page	View it Online	Download Datasheet

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