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c-841-08 Datasheet PDF File

For c-841-08 Found Datasheets File :: 236 Search Time::2.032ms
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				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM684000C KM684000CL KM684000CLG-5 KM684000CLG-5L KM684000CLG-7 KM684000CLG-7L KM684000CLGI-5 KM684000CLGI-5L KM684000CLGI-7 KM684000CLGI-7L KM684000CLI KM684000CLI-L KM684000CL-L KM684000CLP-5 KM684000CLP-5L KM684000CLP-7 KM684000CLP-7L KM684000CLR-5L KM684000CLR-7L KM684000CLRI-5L KM684000CLRI-7L KM684000CLT-5L KM684000CLT-7L KM684000CLTI-5L KM684000CLTI-7L
OCR Text	...50 0 to 70 -40 to 85 Unit V V W C C C Remark KM684000CL/L-L KM684000CLI/LI-L 1. Stresses greater than those listed under "Absolute Maximu...841 20.950.10 0.8250.004 #16 1.000.10 0.0390.004 1.20 0.047MAX 0.10 MAX 0.004 MAX 0.15 +0.10 -0.0...
Description	Quadruple Bilateral Analog Switch 14-TVSOP -40 to 85 Quadruple Bilateral Analog Switch 14-SOIC -40 to 85 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM Quadruple Bilateral Analog Switch 14-PDIP -40 to 85 512Kx8位低功耗CMOS静态RAM
File Size	168.38K / 9 Page	View it Online	Download Datasheet

				ANALOGICTECH[Advanced Analogic Technologies]
Part No.	AAT3560IGY-280-T1 AAT3562IGY-280-T1 AAT3564IGY-280-T1 AAT3564IGY-220-T1 AAT3560IGY-220-T1 AAT3564IGY-460-T1 AAT3560 AAT3560IGY-230-T1 AAT3560IGY-240-T1 AAT3560IGY-250-T1 AAT3560IGY-260-T1 AAT3560IGY-270-T1 AAT3560IGY-290-T1 AAT3560IGY-300-T1 AAT3560IGY-310-T1 AAT3560IGY-320-T1 AAT3560IGY-330-T1 AAT3560IGY-340-T1 AAT3560IGY-350-T1 AAT3560IGY-360-T1 AAT3560IGY-370-T1 AAT3560IGY-380-T1 AAT3560IGY-390-T1 AAT3560IGY-400-T1 AAT3560IGY-410-T1 AAT3560IGY-420-T1 AAT3560IGY-430-T1 AAT3560IGY-440-T1 AAT3560IGY-450-T1 AAT3560IGY-460-T1 AAT3562 AAT3562IGY-220-T1 AAT3562IGY-230-T1 AAT3562IGY-240-T1 AAT3562IGY-250-T1 AAT3562IGY-260-T1 AAT3562IGY-270-T1 AAT3562IGY-290-T1 AAT3562IGY-300-T1 AAT3562IGY-310-T1 AAT3562IGY-320-T1 AAT3562IGY-330-T1 AAT3562IGY-340-T1 AAT3562IGY-350-T1 AAT3562IGY-360-T1 AAT3562IGY-370-T1 AAT3562IGY-380-T1 AAT3562IGY-390-T1 AAT3562IGY-400-T1 AAT3562IGY-410-T1 AAT3562IGY-420-T1 AAT3562IGY-430-T1 AAT3562IGY-440-T1 AAT3562IGY-450-T1 AAT3562IGY-460-T1 AAT3564 AAT3564IGY-230-T1 AAT3564IGY-240-T1 AAT3564IGY-250-T1 AAT3564IGY-260-T1 AAT3564IGY-270-T1 AAT3564IGY-290-T1 AAT3564IGY-300-T1 AAT3564IGY-310-T1 AAT3564IGY-320-T1 AAT3564IGY-330-T1 AAT3564IGY-340-T1 AAT3564IGY-350-T1 AAT356
OCR Text	...ds) for 10s Units V V mA mA C C Note: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the devic...841 3.900 3.958 3.802 3.997 3.940 4.000 4.060 3.900 4.100 4.038 4.1...
Description	NanoPower Voltage Detector
File Size	243.29K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K6R1004C1D-JCI10_12 K6R1004C1D-JCI10 K6R1004C1D-JCI12 K6R1004V1D-JCI08 K6R1004V1D-JCI10 K6R1008C1D-JTCI10 K6R1008C1D-JTCI12 K6R1008V1D K6R1008V1D-JTCI08 K6R1008V1D-JTCI10 K6R1008V1D-J_TC_I10 K6R1004C1D-JC_I10 K6R1004C1D-JC_I12 K6R1004V1D-JC_I08 K6R1004V1D-JC_I10 K6R1008C1D-J_TC_I10 K6R1008C1D-J_TC_I12 K6R1008V1D-J_TC_I08 K6R1016V1D-JTICI08_10 K6R1016C1D-JTCI10_12 K6R1016C1D-JECII10_12 K6R1004V1D-JCI08_10 K6R1008V1D-JTCI08_10 K6R1016V1D-JECI08_10 K6R1008C1D-JTCI10_12
OCR Text	...I) 08/10 128K x8 K6R1008C1D-J(T)C(I) 10/12 K6R1008V1D-J(T)C(I) 08/10 64K x16 K6R1016C1D-J(T,E)C(I) 10/12 K6R1016V1D-J(T,E)C(I) 08/10 VDD(V) ...841 20.95 0.12 0.825 0.005 ( 1.30 ) 0.051 ( 1.30 ) 0.051 0.43 +0.10 -0.05 #16 0.69 0.027 MIN ...
Description	64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
File Size	181.71K / 10 Page	View it Online	Download Datasheet

				NEC Corp. NEC[NEC]
Part No.	NE72218 NE72218-T1 NE72218-T2
OCR Text	C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES * High power gain in C to X band: GS = 4.5 dB TYP. @ f = 12 GHz * Ga...841 16.857 16.530 16.398 15.252 13.995 12.822 12.769 12.379 12.271 12.698 13.096 13.357 13.657 13.18...
Description	RES-MF 150 OHM 1/4W 1% C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET
File Size	57.69K / 12 Page	View it Online	Download Datasheet

				Vishay Intertechnology,Inc. VISAY[Vishay Siliconix]
Part No.	BFP67R BFP67 BFP67W
OCR Text	...lute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltag...841 0.684 0.567 0.487 0.464 0.455 0.462 0.485 0.507 0.542 0.574 0.622 0.654 ANG deg -83.5 -144.8 -16...
Description	Silicon NPN Planar RF Transistor From old datasheet system
File Size	207.93K / 13 Page	View it Online	Download Datasheet

				SemeLAB SEME-LAB[Seme LAB]
Part No.	D2001UK
OCR Text	C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W - 28V - 1GHz SINGLE ENDED FEATU...841 0.804 0.804 0.804 0.822 0.822 0.841 0.832 S21 mag 16.778 12.882 9.772 7.674 6.237 4.955 4.121 3....
Description	METAL GATE RF SILICON FET Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-28V-1GHz,Single Ended)(???澶??DMOS灏??纭?????绠?2.5W-28V-1GHz,???寮?)
File Size	46.51K / 4 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	KTY85-1 KTY85-110 KTY85-120 KTY85-121 KTY85-122 KTY85-150 KTY85-151 KTY85-152
OCR Text	...emperature CONDITIONS Tamb = 25 C; Icont = 1 mA MARKING BAND COLOUR yellow red white green grey black blue handbook, halfpage KTY85-1 se...841 910 983 1020 1060 1143 1231 1321 1416 1515 1617 1723 1834 1948 2006 TEMP. ERROR (K) 3.88 3.72 3....
Description	Silicon temperature sensors
File Size	57.26K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MRFIC0916
OCR Text	... to +100 Unit Vdc dBm mW mA C/W C C GND 1 3 RF OUT RF IN 2 4 GND Pin Connections and Functional Block Diagram...841 0.826 0.811 0.802 0.790 0.776 0.765 0.753 0.742 0.734 0.723 0.712 0.703 0.691 0.681 0.674 6f ...
Description	SILICON GENERAL PURPOSE RF CASCODE AMPLIFIER
File Size	96.47K / 8 Page	View it Online	Download Datasheet

				SEME-LAB[Seme LAB] SemeLAB
Part No.	D2012UK
OCR Text	C N (typ) B 3 D (2 pls) 2 1 A F (2 pls) H J GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED FEATUR...841 0.871 0.891 0.902 0.923 0.933 0.955 0.955 0.966 0.955 ang -122 -146 -156 -163 -170 -174 -175 -17...
Description	METAL GATE RF SILICON FET
File Size	52.89K / 4 Page	View it Online	Download Datasheet

				Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic http://
Part No.	K6T4008C1C K6T4008C1C-B K6T4008C1C-DB55 K6T4008C1C-DB70 K6T4008C1C-DL55 K6T4008C1C-DL70 K6T4008C1C-F K6T4008C1C-GB55 K6T4008C1C-GB70 K6T4008C1C-GF55 K6T4008C1C-GF70 K6T4008C1C-GL55 K6T4008C1C-GL70 K6T4008C1C-GP55 K6T4008C1C-GP70 K6T4008C1C-L K6T4008C1C-MB55 K6T4008C1C-MB70 K6T4008C1C-MF55 K6T4008C1C-MF70 K6T4008C1C-P K6T4008C1C-VB55 K6T4008C1C-VB70 K6T4008C1C-VF55 K6T4008C1C-VF70 K6T4008C K6T4008C1CFAMILY
OCR Text	...50 0 to 70 -40 to 85 Unit V V W C C C Remark K6T4008C1C-L/-B K6T4008C1C-P/-F 1. Stresses greater than those listed under "Absolute Maximu...841 20.950.10 0.8250.004 #16 1.000.10 0.0390.004 1.20 0.047MAX 0.10 MAX 0.004 MAX 0.15 +0.10 -0.0...
Description	512Kx8 bit Low Power CMOS Static RAM 512K X 8 STANDARD SRAM, 70 ns, PDIP32 512K X 8 STANDARD SRAM, 55 ns, PDSO32 512K X 8 STANDARD SRAM, 70 ns, PDSO32 512Kx8 bit Low Power CMOS Static RAM 512Kx8位低功耗CMOS静态RAM
File Size	168.56K / 9 Page	View it Online	Download Datasheet

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