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  h-982-34 Datasheet PDF File

For h-982-34 Found Datasheets File :: 229    Search Time::1.094ms    
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    MRF15060 MRF15060S

MOTOROLA[Motorola, Inc]
Part No. MRF15060 MRF15060S
OCR Text ... M TA M B M N H E F C -T- SEATING PLANE DIM A B C D E F G H K N Q R INCHES MIN MAX 0.995 1.005 0.380 0.390 0.170 0.205 0.455 0.465 0.060 0.075 0.004 0.006 0.800 BSC 0.078 0.090 0.117 0.137 0.595 0.605 0.120 0.130...
Description RF POWER BIPOLAR TRANSISTORS

File Size 162.37K  /  8 Page

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    MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3

MOTOROLA[Motorola, Inc]
Part No. MRF18060A MRF18060ALSR3 MRF18060AR3 MRF18060ASR3
OCR Text ... 4 Pin, INPUT POWER (WATTS) 5 6 h Pout 60 55 , DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15 3W VDD = 26 Vdc IDQ = 500 mA 1W 0.5 W 1860 1840 f, FREQUENCY (MHz) Figure 7. Output Power versus Frequency Figure 8. Output Power ...
Description MRF18060A, MRF18060AR3, MRF18060ALSR3, MRF18060ASR3 1.80-1.88 GHz, 60 W, 26 V Lateral N-Channel RF Power MOSFETs
RF POWER FIELD EFFECT TRANSISTORS

File Size 399.98K  /  8 Page

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    MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3

Motorola, Inc.
MOTOROLA[Motorola, Inc]
Part No. MRF18060B MRF18060BLSR3 MRF18060BR3 MRF18060BSR3
OCR Text ...6 Vdc IDQ = 500 mA f = 1880 MHz h Pout 60 55 , DRAIN EFFICIENCY (%) 50 45 40 35 30 25 20 15 Figure 7. Output Power versus Frequency Figure 8. Output Power and Efficiency versus Input Power 0 -2 Gps -4 -6 -8 -10 -12 -14 IRL VDD = 2...
Description HALL EFFFECT LATCH, SMD, SOT23W-3; Temp, op. min:-40(degree C); Temp, op. max:150(degree C); Pins, No. of:3; Case style:SOT-23W; Base number:3282; Bop, max:150G; Termination Type:SMD; Temperature, operating range:-40(degree C) to RoHS Compliant: Yes
RF Power Field Effect Transistors

File Size 486.59K  /  8 Page

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    AJT030 ASI10546

Advanced Semiconductor
Part No. AJT030 ASI10546
OCR Text ...nigoldTM Metalization System F H G DIM A B C D MINIMUM inches / mm MAXIMUM inches / mm .140 / 3.56 .110 / 2.80 .110 / 2.80...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description    NPN SILICON RF POWER TRANSISTOR

File Size 16.98K  /  1 Page

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    AVD350 ASI10566

Advanced Semiconductor
Part No. AVD350 ASI10566
OCR Text ...nigoldTM Metalization System H I J K P M N L DIM A B C D E MINIMUM inches / mm MAXIMUM inches / mm .020 / 0.51 .100 /...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.73K  /  1 Page

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    AVF250 ASI10571

ASI[Advanced Semiconductor]
Part No. AVF250 ASI10571
OCR Text ...nigoldTM Metalization System H I J K P M N L DIM A B C D E MINIMUM inches / mm MAXIMUM inches / mm .020 / 0.51 .100 /...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.77K  /  1 Page

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    AVF400 ASI10574

ASI[Advanced Semiconductor]
Part No. AVF400 ASI10574
OCR Text ...nigoldTM Metalization System H I J K P M N L DIM A B C D E F G H I MINIMUM inches / mm MAXIMUM inches / mm .020 / 0.5...982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1...
Description NPN SILICON RF POWER TRANSISTOR

File Size 16.79K  /  1 Page

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    LA2000

SANYO[Sanyo Semicon Device]
Part No. LA2000
OCR Text ...Symbol ICC VCE (sat) VF VIN VTH-H VTH-L V8 pin IL-TR IL-Di Conditions f = 1 kHz, VIN = -45 dB I6 = 600 mA IF = 600 mA f = 1 kHz -43 3.0 1.8 ...982-2/8 LA2000 3. Time delays and obtaining CRs When input signals that have been applied at a l...
Description Audio Level Sensor

File Size 169.75K  /  8 Page

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    D1028UK D1028

Semelab(Magnatec)
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
Part No. D1028UK D1028
OCR Text H D 3 P (2 pls) A 5 4 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 300W - 28V - 175MHz PUSH-PULL FEATURES * SIMPLIFIED A...982 0.982 ang -161.3 -165.9 -168.2 -169.2 -170.2 -171.2 -171.4 -172.4 -173.0 -173.2 -173.6 -174.1 -1...
Description Gold Metallised Multi-Purpose Silicon DMOS RF FET(300W-28V-175MHz,Push-Pull)(镀金多用DMOS射频硅场效应300W-28V-175MHz,推挽)
METAL GATE RF SILICON FET

File Size 125.76K  /  7 Page

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    PTF10133

ERICSSON[Ericsson]
Ericsson Microelectronics
Part No. PTF10133
OCR Text ...indicated. Symbol Gps P-1dB h Y Min 12.5 85 45 -- Typ 13.5 90 50 -- Max -- -- -- 10:1 Units dB Watts % -- e 1 PTF...982 0.983 0.989 0.989 0.987 0.983 0.982 0.980 0.972 0.958 0.929 0.858 0.693 0.783 0.918 0.951 0.974 ...
Description 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor

File Size 176.20K  /  6 Page

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