| |
|
 |
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
SFH487P Q62703-Q517
|
| OCR Text |
ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 487 P
Area not flat
0.7 0.8 0.4 0.4
0.6 0.4
3.1 2.5 2.0 1.7 4.0 3.6
2.54 mm spacing
o3.1 o2.9
1.8 1.2 29 27 4.5 4.0 Cathode
3.5 Chip position
0.... |
| Description |
GaAIAs-ir-lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
From old datasheet system
|
| File Size |
37.63K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Part No. |
SFH409-2 Q62702-P1001 Q62702-P1002 Q62702-P860 SFH409 SFH409-1
|
| OCR Text |
ir-lumineszenzdiode GaAs Infrared Emitter
SFH 409
Area not flat
0.7 0.4
0.6 0.4
5.2 4.5
2.54 mm spacing
0.8 0.4
4.1 3.9
4.0 3.6
Approx. weight 0.3 g
Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unl... |
| Description |
From old datasheet system
GaAs Infrared Emitter
Mica Film Capacitor; Capacitance:47pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
CAP MICA 43PF 300V SMD 砷化镓红外发射器
|
| File Size |
33.60K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| Part No. |
SFH405 Q62702-P835
|
| OCR Text |
ir-lumineszenzdiode GaAs Infrared Emitter
2.84 2.24
SFH 405
2.7 2.5
2.1 1.5 2.54 spacing Collector (SFH 305) Cathode (SFH 405)
1.15 0.90
1)
0.5 0.4
Approx. weight 0.02 g
GEO06137
Mae in mm, wenn nicht anders angege... |
| Description |
GaAs-ir-lumineszenzdiode GaAs Infrared Emitter
|
| File Size |
32.50K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
Q62703-Q67 LD261 LD261-5 Q62703-Q395
|
| OCR Text |
ir-lumineszenzdiode GaAs Infrared Emitter
Chip position
LD 261
2.4 2.1
1.9 1.7
0.5 0.4
2.7 2.5
0.25 0.15
0.7 0.6
0 ... 5
0.4 A
A Radiant sensitive area (0.4 x 0.4) 1.4 1.0 Collector (BPX 81) Cathode (LD 261)
... |
| Description |
GaAs-ir-lumineszenzdiode GaAs Infrared Emitter 砷化镓红外Lumineszenzdiode砷化镓红外发射器
|
| File Size |
34.92K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| Part No. |
SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q62703-Q2852
|
| OCR Text |
ir-lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm)
SFH 485 P
Area not flat 0.6 0.4
2.54 mm spacing 0.8 0.4
5.0 4.2
Cathode 3.85 3.35
o5.1 o4.8
5.9 5.5
1.8 1.2
29 27
1.0 0.5 Chip position
0.6 0.4
fex0... |
| Description |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-ir-lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
| File Size |
44.57K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
Siemens Group
SIEMENS AG
|
| Part No. |
LD242E7800 Q62703-Q3509 LD242 LD242-2 LD242-3 Q62703-Q198 Q62703-Q199
|
| OCR Text |
ir-lumineszenzdiode GaAs Infrared Emitter
LD 242
o0.45
2.54 mm spacing
Chip position
o4.3 o4.1
1 0.9 .1 1.1 .9 0
2.7
1
14.5 12.5
3.6 3.0
o5.5 o5.2
GET06625
Anode (LD 242, BPX 63, SFH 464) Cathode (SFH 483) A... |
| Description |
GaAs Infrared Emitter
DSUB 11X1 M PCB G30 砷化镓红外发射器
|
| File Size |
38.62K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
