| |
|
 |
IRF[International Rectifier]
|
| Part No. |
IRFPS3815PBF
|
| OCR Text |
...- VDD = 75V --- ID = 58A ns --- RG = 1.03 --- VGS = 10V D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS... |
| Description |
Advanced Process Technology
HEXFET Power MOSFET
|
| File Size |
128.76K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
List of Unclassifed Man...
|
| Part No. |
1682728
|
| OCR Text |
rg-58a/u type, 20 awg stranded (19x33) .035" tinned copper conductor, polyethylene insulation, tinned copper braid shield (95% coverage), pvc jacket. physical characteristics (overall) conductor awg: # coax awg stranding conductor material ... |
| Description |
rg-58a/u type, 20 AWG stranded (19x33) .035 tinned copper conductor
|
| File Size |
92.63K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APTM120u10SA
|
| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
|
| File Size |
290.83K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APTM120u10SAG
|
| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch Series & parallel diodes MOSFET Power Module
|
| File Size |
265.55K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
MICROSEMI[Microsemi Corporation]
|
| Part No. |
APTM120u10DAG
|
| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch with Series diodes MOSFET Power Module
|
| File Size |
263.05K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APTM120u100D-ALN
|
| OCR Text |
...gy vs Current 16 24
V DS =800V RG =1.2 T J=125C L=100H V DS=800V RG=1.2 T J=125C L=100H
Rise and Fall times vs Current 100 t d(off) 80
VDS=800V RG=1.2 TJ=125C L=100H
tf
tr and tf (ns)
60 40 20 0 30 60 90 120 150 I D, Drain Cur... |
| Description |
Single switch with Series diodes MOSFET Power Module
|
| File Size |
307.79K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
ADPOW[Advanced Power Technology]
|
| Part No. |
APT60M75JLL_04 APT60M75JLL APT60M75JLL04
|
| OCR Text |
...= 15V VDD = 300V ID = 58A @ 25C RG = 0.6 6 INDuCTIVE SWITCHING @ 25C VDD = 400V, VGS = 15V ID = 58A, RG = 5 6 INDuCTIVE SWITCHING @ 125C VDD = 400V VGS = 15V ID = 58A, RG = 5
MIN
TYP
MAX
uNIT
8930 1130 50 195 48 100 23 15 55 ... |
| Description |
POWER MOS 7 R MOSFET
|
| File Size |
158.96K /
5 Page |
View
it Online |
Download Datasheet |
|
For
rg-58a u Found Datasheets File :: 58 Search Time::5.375ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | |
▲Up To
Search▲ |
|
Price and Availability
|
